KSM840 Datasheet, PDF (2/4 Pages) Kersemi Electronic Co., Ltd. – Advanced high cell denity trench technology for ultra RDS(ON)

KSM840
KERSMI ELECTRONIC CO.,LTD.
Symbol
Parameter
RƟJC
Thermal Resistance,Junction to Case1
RƟJA
Thermal Resistance,Junction to Ambient1
Ratings
0.93
62.5
Units
℃/W
Package Marking and Ordering Information
Part NO.
KSM840
Marking
KSM840
Package
TO-220
Electrical Characteristics TC=25℃ unless otherwise noted
Symbol
BVDSS
IDSS
IGSS
VGS(th)
RDS(ON)
Parameter
Conditions
Off Characteristics
Drain-Sourtce Breakdown Voltage
VDS=0V,ID=250μA
Zero Gate Voltage Drain Current
VDS=0V, VDS=32V
Gate-Source Leakage Current
VDS=±20V, VDS=0A
On Characteristics
GATE-Source Threshold Voltage
VDS=VDS, ID=250μA
Drain-Source On Resistance²
VDS=10V,ID=6A
Min Typ Max Units
500 — — v
— — 10 μA
— — ±100 nA
2.0 — 4.0 V
— 0.65 0.9
Ω
GFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
trr
Qrr
VDS=2.5V,ID=5A
— — — ---
Forward Transconductance
VDS=5V,ID=12A
— 7.3 — S
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS=15V,VGS=0V,
f=1MHz
— 1400 1800
— 145 190 pF
— 35 45
Switching Characteristics
Turn-On Delay Time
VDS=20V,
— 22 55 ns
Rise Time
Turn-Off Delay Time
VGS=10V,RGEN=3.3Ω
— 65 140 ns
— 125 260 ns
Fall Time
— 75 160 ns
Total Gate Charge
— 41 53 nC
Gate-SourceCharge
Gate-Drain “Miller” Charge
VGS=4.5V, VDS=20V,
ID=6A
— 6.5
— 17
— nC
— nC
Drain-Source Diode Characteristics
Source-Drain Diode ForwardVoltage²
VGS=0V,IS =1A
— — 1.4 V
Reverse Recovery Time
Reverse Recovery Charge
— 390 — ns
IF=7A,di/dt=100A/μS
— 4.2 — nC
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