KSM7N65 Datasheet, PDF (2/4 Pages) Kersemi Electronic Co., Ltd. – Advanced high cell denity trench technology for ultra RDS(ON)

KSM7N65
KERSMI ELECTRONIC CO.,LTD.
Symbol
Parameter
RƟJC
Thermal Resistance, Junction to Case1
RƟJA
Thermal Resistance ,Junction to Ambient1
Ratings
0.78
62.5
Units
℃/W
Package Marking and Ordering Information
Part NO.
KSM7N65
Marking
KSM7N65
Package
TO-220
Electrical Characteristics TC=25℃ unless otherwise noted
Symbol
BVDSS
IDSS
IGSS
VGS(th)
RDS(ON)
GFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
trr
Qrr
Parameter
Conditions
Min Typ
Off Characteristics
Drain-Sourtce Breakdown Voltage
VDS=0V,ID=250μA
650 —
Zero Gate Voltage Drain Current
VDS=0V, VDS=32V
——
Gate-Source Leakage Current
VDS=±20V, VDS=0A
——
On Characteristics
GATE-Source Threshold Voltage
VDS=VDS, ID=250μA
2.0 —
Drain-Source On Resistance²
VDS=10V,ID=6A
VDS=2.5V,ID=5A
— 1.2
——
Forward Transconductance
VDS=5V,ID=12A
—8
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS=15V,VGS=0V,
f=1MHz
— 955
— 100
— 12
Switching Characteristics
Turn-On Delay Time
VDS=20V,
— 20
Rise Time
— 50
Turn-Off Delay Time
VGS=10V,RGEN=3.3Ω
— 90
Fall Time
— 55
Total Gate Charge
— 28
Gate-SourceCharge
VGS=4.5V, VDS=20V,
— 4.5
Gate-Drain “Miller” Charge
ID=6A
— 12
Drain-Source Diode Characteristics
Source-Drain Diode ForwardVoltage²
VGS=0V,IS =1A
——
Reverse Recovery Time
Reverse Recovery Charge
IF=7A,di/dt=100A/μS
— 400
— 3.3
Max
—
1
±100
4.0
1.4
—
—
1245
130
16
50
110
190
120
36
—
—
1.4
—
—
Units
v
μA
nA
V
Ω
S
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
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