KSM630 Datasheet, PDF (2/4 Pages) Kersemi Electronic Co., Ltd. – Advanced high cell denity trench technology for ultra RDS(ON)

KSM630
KERSMI ELECTRONIC CO.,LTD.
200V N-channel MOSFET
Symbol
Parameter
Ratings Units
RƟJC
Thermal Resistance ,Junction to Case1
62
℃/W
RƟJA
Thermal Resistance, Junction to Ambient1
1.7
Package Marking and Ordering Information
Part NO.
KSM630
Marking
KSM630
Package
TO-220
Electrical Characteristics TC=25℃ unless otherwise noted
Symbol
BVDSS
IDSS
IGSS
VGS(th)
RDS(ON)
GFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
trr
Qrr
Parameter
Conditions
Min Typ
Off Characteristics
Drain-Sourtce Breakdown Voltage
VDS=0V,ID=250μA
200 —
Zero Gate Voltage Drain Current
VDS=0V, VDS=32V
——
Gate-Source Leakage Current
VDS=±20V, VDS=0A
——
On Characteristics
GATE-Source Threshold Voltage
VDS=VDS, ID=250μA
2.0 —
Drain-Source On Resistance²
VDS=10V,ID=6A
VDS=2.5V,ID=5A
——
——
Forward Transconductance
VDS=5V,ID=12A
3.8 —
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS=15V,VGS=0V,
f=1MHz
— 800
— 240
— 76
Switching Characteristics
Turn-On Delay Time
VDS=20V,
— 9.4
Rise Time
— 28
Turn-Off Delay Time
VGS=10V,RGEN=3.3Ω
— 39
Fall Time
— 20
Total Gate Charge
——
Gate-SourceCharge
VGS=4.5V, VDS=20V,
——
Gate-Drain “Miller” Charge
ID=6A
——
Drain-Source Diode Characteristics
Source-Drain Diode ForwardVoltage²
VGS=0V,IS =1A
——
Reverse Recovery Time
Reverse Recovery Charge
IF=7A,di/dt=100A/μS
— 170
— 1.1
Max
—
25
±100
4.0
0.4
—
—
—
—
—
—
—
—
—
43
7.0
23
2.0
340
2.2
Units
v
μA
nA
V
Ω
S
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
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