KSM5305 Datasheet, PDF (2/4 Pages) Kersemi Electronic Co., Ltd. – Green device available.

KSM5305
KERSMI ELECTRONIC CO.,LTD.
-55V P-channel MOSEETS
Symbol
Parameter
Ratings Units
RƟJC
Thermal Resistance ,Junction to Case1
1.4
℃/W
RƟJA
Thermal Resistance, Junction to Ambient1
62
Package Marking and Ordering Information
Part NO.
KSM5305
Marking
KSM5305
Package
TO-20
Electrical Characteristics TC=25℃ unless otherwise noted
Symbol
Parameter
Conditions
Min Typ
Off Characteristics
BVDSS
Drain-Sourtce Breakdown Voltage
VDS=0V,ID=250μA
-55
—
IDSS
Zero Gate Voltage Drain Current
VDS=0V, VDS=32V
—
—
IGSS
Gate-Source Leakage Current
VDS=±20V, VDS=0A
—
—
On Characteristics
VGS(th)
GATE-Source Threshold Voltage
VDS=VDS, ID=250μA -2.0
—
RDS(ON)
Drain-Source On Resistance²
VDS=10V,ID=6A
——
GFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
trr
Qrr
VDS=2.5V,ID=5A
—
Forward Transconductance
VDS=5V,ID=12A
8.0
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS=15V,VGS=0V,
—
—
f=1MHz
—
Switching Characteristics
Turn-On Delay Time
VDS=20V,
—
Rise Time
—
Turn-Off Delay Time
VGS=10V,RGEN=3.3Ω
—
Fall Time
—
Total Gate Charge
—
Gate-SourceCharge
VGS=4.5V, VDS=20V,
—
Gate-Drain “Miller” Charge
ID=6A
—
Drain-Source Diode Characteristics
Source-Drain Diode ForwardVoltage²
VGS=0V,IS =1A
—
Reverse Recovery Time
Reverse Recovery Charge
—
IF=7A,di/dt=100A/μ
—
S
—
—
1200
520
250
14
66
39
63
—
—
—
—
71
170
Max
—
-25
±100
-4.0
0.06
—
—
—
—
—
—
—
—
—
63
13
29
-1.3
110
250
Units
v
μA
nA
V
Ω
---
S
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
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