KSM5210 Datasheet, PDF (2/4 Pages) Kersemi Electronic Co., Ltd. – Green device available.

KSM5210
KERSMI ELECTRONIC CO.,LTD.
-100V
Symbol
Parameter
RƟJC
Thermal Resistance ,Junction to Case1
RƟJA
Thermal Resistance, Junction to Ambient1
p-channel
Ratings
0.75
62
MOSEETS
Units
℃/W
Package Marking and Ordering Information
Part NO.
KSM5210
Marking
KSM5210
Package
TO-220
Electrical Characteristics TC=25℃ unless otherwise noted
Symbol
BVDSS
IDSS
IGSS
VGS(th)
RDS(ON)
Parameter
Conditions
Off Characteristics
Drain-Sourtce Breakdown Voltage
VDS=0V,ID=250μA
Zero Gate Voltage Drain Current
VDS=0V, VDS=32V
Gate-Source Leakage Current
VDS=±20V, VDS=0A
On Characteristics
GATE-Source Threshold Voltage
VDS=VDS, ID=250μA
Drain-Source On Resistance²
VDS=10V,ID=6A
Min Typ Max Units
-100 — — v
— — 25 μA
—
— ±100 nA
-2.0 — -4.0 V
—
— 0.06 _Ω
GFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
trr
Qrr
VDS=2.5V,ID=5A
—
Forward Transconductance
VDS=5V,ID=12A
10
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS=15V,VGS=0V,
—
—
f=1MHz
—
Switching Characteristics
Turn-On Delay Time
VDS=20V,
—
Rise Time
—
Turn-Off Delay Time
VGS=10V,RGEN=3.3Ω
—
Fall Time
—
Total Gate Charge
—
Gate-SourceCharge
VGS=4.5V, VDS=20V,
—
Gate-Drain “Miller” Charge
ID=6A
—
Drain-Source Diode Characteristics
Source-Drain Diode ForwardVoltage²
VGS=0V,IS =1A
—
Reverse Recovery Time
Reverse Recovery Charge
—
IF=7A,di/dt=100A/μS
—
— — ---
—— S
2700 —
790 — pF
450 —
17 — ns
86 — ns
79 — ns
81 — ns
— 180 nC
— 25 nC
— 97 nC
— -1.6 V
170 260 ns
1.2 1.8 nC
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