KSM3803 Datasheet, PDF (2/5 Pages) Kersemi Electronic Co., Ltd. – Green device available.

KSM3803
KERSMI ELECTRONIC CO.,LTD.
30V N-channel MOSFET
Symbol
RƟJC
RƟJA
Parameter
Thermal Resistance ,Junction to Case1
Thermal Resistance, Junction to Ambient1
Ratings
0.75
62
Units
℃/W
Package Marking and Ordering Information
Part NO.
KSM3803
Marking
KSM3803
Package
TO-220
Electrical Characteristics TC=25℃ unless otherwise noted
Symbol
BVDSS
IDSS
IGSS
VGS(th)
RDS(ON)
GFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
trr
Parameter
Conditions
Min
Off Characteristics
Drain-Sourtce Breakdown Voltage
VDS=0V,ID=250μA
30
Zero Gate Voltage Drain Current
VDS=0V, VDS=32V
—
Gate-Source Leakage Current
VDS=±20V, VDS=0A
—
On Characteristics
GATE-Source Threshold Voltage
VDS=VDS, ID=250μA
1.0
Drain-Source On Resistance²
VDS=10V,ID=6A
—
VDS=2.5V,ID=5A
—
Forward Transconductance
VDS=5V,ID=12A
55
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS=15V,VGS=0V,
—
—
f=1MHz
—
Switching Characteristics
Turn-On Delay Time
VDS=20V,
—
Rise Time
—
Turn-Off Delay Time
VGS=10V,RGEN=3.3Ω
—
Fall Time
—
Total Gate Charge
—
Gate-SourceCharge
VGS=4.5V, VDS=20V,
—
Gate-Drain “Miller” Charge
ID=6A
—
Drain-Source Diode Characteristics
Source-Drain Diode ForwardVoltage²
VGS=0V,IS =1A
—
Reverse Recovery Time
—
IF=7A,di/dt=100A/μS
Typ
—
—
—
—
—
—
—
5000
1800
880
14
230
29
35
—
—
—
—
120
Max
—
25
±100
—
0.00
6
0.00
9
—
—
—
—
—
—
—
—
140
41
78
1.3
180
Units
v
μA
nA
V
Ω
---
S
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
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