KSM3404 Datasheet, PDF (2/4 Pages) Kersemi Electronic Co., Ltd. – Advanced high cell denity trench technology for ultra RDS(ON)

KSM3404
KERSMI ELECTRONIC CO.,LTD.
30V N-channel MOSFET
Symbol
RƟJC
RƟJA
Parameter
Thermal Resistance, Junction to Case1
Thermal Resistance ,Junction to Ambient1
Ratings
90
60
Units
℃/W
Package Marking and Ordering Information
Part NO.
KSM3404
Marking
KSM3404
Package
SOT-23
Electrical Characteristics TC=25℃ unless otherwise noted
Symbol
BVDSS
IDSS
IGSS
VGS(th)
RDS(ON)
GFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
trr
Qrr
Parameter
Conditions
Off Characteristics
Drain-Sourtce Breakdown Voltage
VDS=0V,ID=250μA
Zero Gate Voltage Drain Current
VDS=0V, VDS=32V
Gate-Source Leakage Current
VDS=±20V, VDS=0A
On Characteristics
GATE-Source Threshold Voltage
VDS=VDS, ID=250μA
Drain-Source On Resistance²
VDS=10V,ID=6A
VDS=2.5V,ID=5A
Forward Transconductance
VDS=5V,ID=12A
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS=15V,VGS=0V,
f=1MHz
Switching Characteristics
Turn-On Delay Time
VDS=20V,
Rise Time
Turn-Off Delay Time
VGS=10V,RGEN=3.3Ω
Fall Time
Total Gate Charge
VGS=4.5V, VDS=20V,
Gate-Source Charge
ID=6A
Gate-Drain “Miller” Charge
Drain-Source Diode Characteristics
Source-Drain Diode ForwardVoltage²
VGS=0V,IS =1A
Reverse Recovery Time
Reverse Recovery Charge
IF=7A,di/dt=100A/μS
Min Typ
30 —
——
——
1 1.9
— 22.5
— 31.3
— 14.5
— 680
— 102
— 77
— 4.6
— 3.8
— 20.9
—5
— 13.8
8
— 6.78
— 1.8
——
— 16.1
— 7.4
Max
—
1
100
3
28
38
—
820
—
—
6.5
5.7
30
7.5
17
8.1
—
—
21
10
Units
v
μA
nA
V
MΩ
S
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
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