KSM3403 Datasheet, PDF (2/4 Pages) Kersemi Electronic Co., Ltd. – Advanced high cell denity trench technology for ultra RDS(ON)

KSM3403
KERSMI ELECTRONIC CO.,LTD.
-30V P-channel MOSFET
Symbol
RƟJC
RƟJA
Parameter
Thermal Resistance, Junction to Case1
Thermal Resistance ,Junction to Ambient1
Ratings
90
125
Units
℃/W
Package Marking and Ordering Information
Part NO.
KSM3403
Marking
KSM3403
Package
SOT-23
Electrical Characteristics TC=25℃ unless otherwise noted
Symbol
BVDSS
IDSS
IGSS
VGS(th)
RDS(ON)
GFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
trr
Qrr
Parameter
Conditions
Min Typ Max
Off Characteristics
Drain-Sourtce Breakdown Voltage
VDS=0V,ID=250μA
-30 — —
Zero Gate Voltage Drain Current
VDS=0V, VDS=32V
— — -1
Gate-Source Leakage Current
VDS=±20V, VDS=0A
— — ±100
On Characteristics
GATE-Source Threshold Voltage
VDS=VDS, ID=250μA -0.6 -1 -1.4
Drain-Source On Resistance²
VDS=10V,ID=6A
VDS=2.5V,ID=5A
— 102 130
— 154 200
Forward Transconductance
VDS=5V,ID=12A
3 4.5 —
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS=15V,VGS=0V,
f=1MHz
— 409 500
— 55 —
— 42 —
Switching Characteristics
Turn-On Delay Time
VDS=20V,
— 5.3 8
Rise Time
— 4.4 9
Turn-Off Delay Time
VGS=10V,RGEN=3.3Ω
— 31.5 45
Fall Time
— 31.5 45
Total Gate Charge
— 4.4 5.3
Gate-Source Charge
VGS=4.5V, VDS=20V,
— 0.8
—
Gate-Drain “Miller” Charge
ID=6A
— 1.32 —
Drain-Source Diode Characteristics
Source-Drain Diode ForwardVoltage²
VGS=0V,IS =1A
— -0.85 -1
Reverse Recovery Time
Reverse Recovery Charge
— 15.8 19
IF=2.5A,DI/DT=100A/μS
— 8 12
Units
v
μA
nA
V
MΩ
S
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
www.kersemi.com
2