KSM3401 Datasheet, PDF (2/4 Pages) Kersemi Electronic Co., Ltd. – Advanced high cell denity trench technology for ultra RDS(ON)

KSM3401
KERSMI ELECTRONIC CO.,LTD.
-30V P--channel MOSFET
Symbol
RƟJC
RƟJA
Parameter
Thermal Resistance, Junction to Case1
Thermal Resistance ,Junction to Ambient1
Ratings
90
125
Units
℃/W
Package Marking and Ordering Information
Part NO.
KSM3401
Marking
KSM3401
Package
SOT-23
Electrical Characteristics TC=25℃ unless otherwise noted
Symbol
BVDSS
IDSS
IGSS
VGS(th)
RDS(ON)
GFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
trr
Qrr
Parameter
Conditions
Min Typ
Off Characteristics
Drain-Sourtce Breakdown Voltage
VDS=0V,ID=250μA
-30 —
Zero Gate Voltage Drain Current
VDS=24V, VDS=0V
——
Gate-Source Leakage Current
VDS=V, VDS=±12A
——
On Characteristics
GATE-Source Threshold Voltage
VDS=VDS, ID=250μA -0.7 -1
Drain-Source On Resistance²
VDS=10V,ID=6A
VDS=2.5V,ID=5A
——
— 53
Forward Transconductance
VDS=5V,ID=12A
7 11
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS=15V,VGS=0V,
f=1MHz
— 954
— 115
— 77
Switching Characteristics
Turn-On Delay Time
VDS=20V,
— 6.3
Rise Time
— 3.2
Turn-Off Delay Time
VGS=10V,RGEN=3.3Ω
— 38.2
Fall Time
— 12
Total Gate Charge
— 9.4
Gate-Source Charge
Gate-Drain “Miller” Charge
VGS=4.5V, VDS=20V,
—
2
ID=6A
—3
Drain-Source Diode Characteristics
Source-Drain Diode ForwardVoltage²
VGS=0V,IS =1A
——
Reverse Recovery Time
Reverse Recovery Charge
IF=4A,di/dt=100A/μS
— 20.2
— 11.2
Max
—
-1
±100
-1.3
75
65
—
—
—
—
—
—
—
—
—
—
—
-2.2
—
—
Units
v
μA
nA
V
MΩ
S
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
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