KSM3207 Datasheet, PDF (2/4 Pages) Kersemi Electronic Co., Ltd. – Advanced high cell denity trench technology for ultra RDS(ON)

KSM3207
KERSMI ELECTRONIC CO.,LTD.
75V N-channel MOSFET
Symbol
Parameter
Ratings Units
RƟJC
Thermal Resistance ,Junction to Case1
0.45
℃/W
RƟJA
Thermal Resistance, Junction to Ambient1
62
Package Marking and Ordering Information
Part NO.
KSM3207
Marking
KSM3207
Package
TO-220
Electrical Characteristics TC=25℃ unless otherwise noted
Symbol
BVDSS
IDSS
IGSS
VGS(th)
RDS(ON)
Parameter
Conditions
Off Characteristics
Drain-Sourtce Breakdown Voltage
VDS=0V,ID=250μA
Zero Gate Voltage Drain Current
VDS=0V, VDS=32V
Gate-Source Leakage Current
VDS=±20V, VDS=0A
On Characteristics
GATE-Source Threshold Voltage
VDS=VDS, ID=250μA
Drain-Source On Resistance²
VDS=10V,ID=6A
Min Typ Max Units
75 — — v
— — 20 μA
— — ±200 nA
2.0 — 4.0 V
— 1.2
4 _MΩ
VDS=2.5V,ID=5A
— — — ---
GFS
Forward Transconductance
VDS=5V,ID=12A
150 — — S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS=15V,VGS=0V,
f=1MHz
— 7600 —
— 710 — pF
— 390 —
Switching Characteristics
td(on)
Turn-On Delay Time
VDS=20V,
— 29 — ns
tr
Rise Time
— 120 — ns
td(off)
Turn-Off Delay Time
VGS=10V,RGEN=3.3Ω
—
68
—
ns
tf
Fall Time
— 74 — ns
Qg
Total Gate Charge
— 180 260 nC
Qgs
Gate-SourceCharge
VGS=4.5V, VDS=20V,
— 48
— nC
Qgd
Gate-Drain “Miller” Charge
ID=6A
— 68 — nC
Drain-Source Diode Characteristics
VSD
Source-Drain Diode ForwardVoltage²
VGS=0V,IS =1A
— — 1.3 V
trr
Reverse Recovery Time
— 42 63 ns
IF=7A,di/dt=100A/μS
Qrr
Reverse Recovery Charge
— 2.6 — nC
www.kersemi.com
2