KSM2304 Datasheet, PDF (2/4 Pages) Kersemi Electronic Co., Ltd. – Advanced high cell denity trench technology for ultra RDS(ON)

KSM2304
KERSMI ELECTRONIC CO.,LTD.
30V N-channel MOSFET
Symbol
RƟJC
RƟJA
Parameter
Thermal Resistance, Junction to Case1
Thermal Resistance ,Junction to Ambient1
Ratings
100
166
Units
℃/W
Package Marking and Ordering Information
Part NO.
KSM2304
Marking
KSM2304
Package
SOT-23
Electrical Characteristics TC=25℃ unless otherwise noted
Symbol
BVDSS
IDSS
IGSS
VGS(th)
RDS(ON)
GFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
trr
Qrr
Parameter
Conditions
Off Characteristics
Drain-Sourtce Breakdown Voltage
VDS=0V,ID=250μA
Zero Gate Voltage Drain Current
VDS=0V, VDS=32V
Gate-Source Leakage Current
VDS=±20V, VDS=0A
On Characteristics
GATE-Source Threshold Voltage
VDS=VDS, ID=250μA
Drain-Source On Resistance²
VDS=10V,ID=6A
VDS=2.5V,ID=5A
Forward Transconductance
VDS=5V,ID=12A
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS=15V,VGS=0V,
f=1MHz
Switching Characteristics
Turn-On Delay Time
VDS=20V,
Rise Time
Turn-Off Delay Time
VGS=10V,RGEN=3.3Ω
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain “Miller” Charge
VGS=4.5V, VDS=20V,
ID=6A
Drain-Source Diode Characteristics
Source-Drain Diode ForwardVoltage²
VGS=0V,IS =1A
Reverse Recovery Time
Reverse Recovery Charge
IF=7A,di/dt=100A/μS
Min Typ
30 —
——
——
— 0.77
— 0.09
2
— 0.14
2
— 4.6
— 240
— 110
— 17
—8
— 12
— 17
—8
— 4.5
— 0.8
— 1.0
——
——
——
Max Units
—v
— μA
±100 nA
1.2 V
0.117
Ω
0.19
—S
—
— pF
—
20 ns
30 ns
35 ns
20 ns
10 nC
— nC
— nC
—
V
— ns
— nC
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