KSM2303 Datasheet, PDF (2/5 Pages) Kersemi Electronic Co., Ltd. – Advanced high cell denity trench technology for ultra RDS(ON)

KSM2303/SI2303
KERSMI ELECTRONIC CO.,LTD.
-20V P-channel MOSFET
Symbol
RƟJC
RƟJA
Parameter
Thermal Resistance, Junction to Case1
Thermal Resistance ,Junction to Ambient1
Ratings
140
175
Units
℃/W
Package Marking and Ordering Information
Part NO.
KSM2303
Marking
KSM2303
Package
SOT-23
Electrical Characteristics TC=25℃ unless otherwise noted
Symbol
BVDSS
IDSS
IGSS
VGS(th)
RDS(ON)
GFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
trr
Qrr
Parameter
Conditions
Min
Off Characteristics
Drain-Sourtce Breakdown Voltage
VDS=0V,ID=250μA
30
Zero Gate Voltage Drain Current
VDS=0V, VDS=32V
—
Gate-Source Leakage Current
VDS=±20V, VDS=0A
—
On Characteristics
GATE-Source Threshold Voltage
VDS=VDS, ID=250μA —
Drain-Source On Resistance²
VDS=10V,ID=6A
—
VDS=2.5V,ID=5A
—
Forward Transconductance
VDS=5V,ID=12A
—
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS=15V,VGS=0V,
—
—
f=1MHz
—
Switching Characteristics
Turn-On Delay Time
VDS=20V,
—
Rise Time
—
Turn-Off Delay Time
VGS=10V,RGEN=3.3Ω
—
Fall Time
—
Total Gate Charge
—
Gate-Source Charge
VGS=4.5V, VDS=20V,
—
Gate-Drain “Miller” Charge
ID=6A
—
Drain-Source Diode Characteristics
Source-Drain Diode ForwardVoltage²
VGS=0V,IS =1A
—
Reverse Recovery Time
Reverse Recovery Charge
—
IF=7A,di/dt=100A/μS
—
Typ
—
—
—
-0.8
0.12
0.23
2.4
260
65
35
6
10
15
7
4.5
0.9
0.9
-0.8
—
—
Max Units
—v
-1 μA
±100 nA
-1.2 V
0.46
MΩ
—
—S
—
— pF
—
20 ns
20 ns
35 ns
20 ns
10 nC
— nC
— nC
-12 V
— ns
— nC
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