KSM13N10 Datasheet, PDF (2/4 Pages) Kersemi Electronic Co., Ltd. – Advanced high cell denity trench technology for ultra RDS(ON)

KSM13N10
KERSMI ELECTRONIC CO.,LTD.
100V
Symbol
Parameter
RƟJC
Thermal Resistance, Junction to Case1
RƟJA
Thermal Resistance ,Junction to Ambient1
N-channel MOSFET
Ratings Units
2.31
℃/W
62.5
Package Marking and Ordering Information
Part NO.
KSM13N10
Marking
KSM13N10
Package
TO-220
Electrical Characteristics TC=25℃ unless otherwise noted
Symbol
BVDSS
IDSS
IGSS
VGS(th)
RDS(ON)
Parameter
Conditions
Off Characteristics
Drain-Sourtce Breakdown Voltage
VDS=0V,ID=250μA
Zero Gate Voltage Drain Current
VDS=0V, VDS=32V
Gate-Source Leakage Current
VDS=±20V, VDS=0A
On Characteristics
GATE-Source Threshold Voltage
VDS=VDS, ID=250μA
Drain-Source On Resistance²
VDS=10V,ID=6A
Min
100
—
—
2.0
—
Typ
—
—
—
—
0.142
Max
—
1
±100
4.0
0.18
Units
v
μA
nA
V
Ω
VDS=2.5V,ID=5A
— — — ---
GFS
Forward Transconductance
VDS=5V,ID=12A
— 6.8 — S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS=15V,VGS=0V,
f=1MHz
— 345 450
— 100 130 pF
— 20 25
Switching Characteristics
td(on)
Turn-On Delay Time
VDS=20V,
— 5 20 ns
tr
Rise Time
— 55 120 ns
td(off)
Turn-Off Delay Time
VGS=10V,RGEN=3.3Ω
—
20
50
ns
tf
Fall Time
— 25 60 ns
Qg
Total Gate Charge
— 12 16 nC
Qgs
Gate-Source Charge
VGS=4.5V, VDS=20V,
— 2.5 — nC
Qgd
Gate-Drain “Miller” Charge
ID=6A
— 5.1 — nC
Drain-Source Diode Characteristics
VSD
Source-Drain Diode ForwardVoltage²
VGS=0V,IS =1A
— — 1.5 V
trr
Reverse Recovery Time
— 72 — ns
IF=7A,di/dt=100A/μS
Qrr
Reverse Recovery Charge
— 0.17 — nC
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