KSM1010 Datasheet, PDF (2/4 Pages) Kersemi Electronic Co., Ltd. – Advanced high cell denity trench technology for ultra RDS(ON)

KSM1010
KERSMI ELECTRONIC CO.,LTD.
60V N-channel MOSFET
Symbol
Parameter
Ratings Units
RƟJC
Thermal Resistance ,Junction to Case1
0.75
℃/W
RƟJA
Thermal Resistance, Junction to Ambient1
62
Package Marking and Ordering Information
Part NO.
KSM1010
Marking
KSM1010
Package
TO-220
Electrical Characteristics TC=25℃ unless otherwise noted
Symbol
BVDSS
IDSS
IGSS
VGS(th)
RDS(ON)
Parameter
Conditions
Off Characteristics
Drain-Sourtce Breakdown Voltage
VDS=0V,ID=250μA
Zero Gate Voltage Drain Current
VDS=0V, VDS=32V
Gate-Source Leakage Current
VDS=±20V, VDS=0A
On Characteristics
GATE-Source Threshold Voltage
VDS=VDS, ID=250μA
Drain-Source On Resistance²
VDS=10V,ID=6A
Min Typ Max Units
60 — — v
— — 25 μA
— — ±100 nA
2.0 — 4.0 V
—
—
12 _MΩ
VDS=2.5V,ID=5A
— — — ---
GFS
Forward Transconductance
VDS=5V,ID=12A
69 — — S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS=15V,VGS=0V,
f=1MHz
— 3210 —
— 690 — pF
— 140 —
Switching Characteristics
td(on)
Turn-On Delay Time
VDS=20V,
— 12 — ns
tr
Rise Time
— 78 — ns
td(off)
Turn-Off Delay Time
VGS=10V,RGEN=3.3Ω
—
48
—
ns
tf
Fall Time
— 53 — ns
Qg
Total Gate Charge
— — 130 nC
Qgs
Gate-SourceCharge
VGS=4.5V, VDS=20V,
——
28 nC
Qgd
Gate-Drain “Miller” Charge
ID=6A
— — 44 nC
Drain-Source Diode Characteristics
VSD
Source-Drain Diode ForwardVoltage²
VGS=0V,IS =1A
— — 1.3 V
trr
Reverse Recovery Time
— 73 110 ns
IF=7A,di/dt=100A/μS
Qrr
Reverse Recovery Charge
— 220 330 nC
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