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| IRLR8743 Datasheet, PDF (2/11 Pages) Kersemi Electronic Co., Ltd. – High Frequency Synchronous Buck Converters for Computer Processor Power | |||
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IRLR8743PBF
IRLU8743PBF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
âÎVDSS/âTJ
RDS(on)
VGS(th)
âVGS(th)/âTJ
IDSS
IGSS
Drain-to-Source Breakdown Voltage
30 âââ âââ V VGS = 0V, ID = 250µA
Breakdown Voltage Temp. Coefficient âââ
Static Drain-to-Source On-Resistance âââ
âââ
20
2.4
3.0
âââ
3.1
3.9
mV/°C Reference to 25°C, ID = 1mA
ee mâ¦
VGS = 10V, ID = 25A
VGS = 4.5V, ID = 20A
Gate Threshold Voltage
1.35 1.9 2.35 V VDS = VGS, ID = 100µA
Gate Threshold Voltage Coefficient
âââ -6.4 âââ mV/°C
Drain-to-Source Leakage Current
âââ âââ 1.0
âââ âââ 150
µA VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
âââ âââ 100 nA VGS = 20V
âââ âââ -100
VGS = -20V
gfs
Qg
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
89 âââ âââ
âââ 39 59
âââ 10 âââ
âââ 3.9 âââ
âââ 13 âââ
âââ 12 âââ
âââ 17 âââ
âââ 21 âââ
S VDS = 15V, ID = 20A
VDS = 15V
nC VGS = 4.5V
ID = 20A
See Fig. 16
nC VDS = 16V, VGS = 0V
RG
Gate Resistance
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
âââ 0.85 1.5
âââ 19 âââ
âââ 35 âââ
âââ 21 âââ
âââ 17 âââ
e â¦
VDD = 15V, VGS = 4.5V
ns
ID = 20A
RG = 1.8â¦
See Fig. 14
Ciss
Input Capacitance
âââ 4880 âââ
VGS = 0V
Coss
Output Capacitance
âââ 950 âââ pF VDS = 15V
Crss
Reverse Transfer Capacitance
âââ 470 âââ
Æ = 1.0MHz
Avalanche Characteristics
Parameter
EAS
d Single Pulse Avalanche Energy
IAR
ÃÂ Avalanche Current
EAR
 Repetitive Avalanche Energy
Typ.
âââ
âââ
âââ
Max.
250
20
13.5
Units
mJ
A
mJ
Diode Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
ÃÂ (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
f âââ âââ
160
MOSFET symbol
âââ âââ
A showing the
integral reverse
640
âââ âââ 1.0
e p-n junction diode.
V TJ = 25°C, IS = 20A, VGS = 0V
âââ 18
âââ 32
27
48
e ns TJ = 25°C, IF = 20A, VDD = 15V
nC di/dt = 300A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2014-5-25
2
www.kersemi.com
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