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IRFR48Z_15 Datasheet, PDF (2/12 Pages) Kersemi Electronic Co., Ltd. – Advanced Process Technology | |||
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AUIRFR48Z
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
âV(BR)DSS/âTJ
RDS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
55 âââ âââ
âââ 0.054 âââ
âââ 8.86 11
V VGS = 0V, ID = 250µA
e V/°C Reference to 25°C, ID = 1mA
m⦠VGS = 10V, ID = 37A
VGS(th)
Gate Threshold Voltage
2.0 âââ 4.0 V VDS = VGS, ID = 50µA
gfs
Forward Transconductance
120 âââ âââ S VDS = 25V, ID = 37A
IDSS
Drain-to-Source Leakage Current
âââ âââ 20 µA VDS = 55V, VGS = 0V
âââ âââ 250
VDS = 55V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
âââ âââ 200 nA VGS = 20V
Gate-to-Source Reverse Leakage
âââ âââ -200
VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg
Total Gate Charge
âââ 40 60
ID = 37A
Qgs
Qgd
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
âââ
âââ
11
15
âââ
âââ
e nC VDS = 44V
VGS = 10V
td(on)
Turn-On Delay Time
âââ 15 âââ
VDD = 28V
tr
Rise Time
âââ 61 âââ
ID = 37A
td(off)
tf
Turn-Off Delay Time
Fall Time
âââ
âââ
40
35
âââ
âââ
e ns RG = 12 â¦
VGS = 10V
LD
Internal Drain Inductance
âââ 4.5 âââ
Between lead,
D
LS
Internal Source Inductance
nH 6mm (0.25in.)
âââ 7.5 âââ
from package
G
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Coss
Output Capacitance
Coss
Output Capacitance
Coss eff.
Effective Output Capacitance
Diode Characteristics
âââ 1720 âââ
âââ 290 âââ
âââ 160 âââ
âââ 1000 âââ
âââ 230 âââ
âââ 360 âââ
and center of die contact
S
VGS = 0V
VDS = 25V
pF Æ = 1.0MHz
VGS = 0V, VDS = 1.0V, Æ = 1.0MHz
f VGS = 0V, VDS = 44V, Æ = 1.0MHz
VGS = 0V, VDS = 0V to 44V
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
âââ âââ 37
MOSFET symbol
(Body Diode)
ISM
Pulsed Source Current
ÃÂ (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
âââ âââ 250
A showing the
integral reverse
âââ âââ 1.3
âââ 20 40
âââ 14 28
e p-n junction diode.
V TJ = 25°C, IS = 37A, VGS = 0V
e ns TJ = 25°C, IF = 37A, VDD = 28V
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
 Limited by TJmax, starting TJ = 25°C, L = 0.11mH
RG = 25â¦, IAS = 37A, VGS =10V. Part not
recommended for use above this value.
 Pulse width ⤠1.0ms; duty cycle ⤠2%.
 Coss eff. is a fixed capacitance that gives the same
charging time as Coss while VDS is rising from 0 to
80% VDSS
Â
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical
repetitive avalanche performance.
 This value determined from sample failure population,
starting TJ = 25°C, L = 0.11mH, RG = 25â¦,
IAS = 37A, VGS =10V.
 When mounted on 1" square PCB (FR-4 or G-10 Material) .
For recommended footprint and soldering techniques
refer to application note #AN-994.
 Rθ is measured at TJ approximately 90°C.
2014-8-22
2
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