IRFR3806 Datasheet, PDF (2/11 Pages) Kersemi Electronic Co., Ltd. – Advanced Process Technology

AUIRFR3806
Static Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V_(BR)DSS
ΔV_(BR)DSS/ΔT_J
R_DS(on)
V_GS(th)
gfs
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
60
–––
–––
––– –––
0.075 –––
12.6 15.8
V V_GS = 0V, I_D = 250μA
™ V/°C Reference to 25°C, I_D = 5mA
f _mΩ V_GS = 10V, I_D = 25A
2.0 ––– 4.0 V V_DS = V_GS, I_D = 50μA
41 ––– ––– S V_DS = 10V, I_D = 25A
R_G(int)
I_DSS
Internal Gate Resistance
Drain-to-Source Leakage Current
––– 0.79 ––– Ω
––– ––– 20 μA
––– ––– 250
I_GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
––– ––– 100 nA
––– ––– -100
Dynamic Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
V_DS = 60V, V_GS = 0V
V_DS = 48V, V_GS = 0V, T_J = 125°C
V_GS = 20V
V_GS = -20V
Symbol
Parameter
Min. Typ. Max. Units
Conditions
Q_g
Total Gate Charge
––– 22 30
Q_gs
Gate-to-Source Charge
––– 5.0 –––
Q_gd
Gate-to-Drain ("Miller") Charge
––– 6.3 –––
Q_sync
Total Gate Charge Sync. (Q_g - Q_gd)
––– 28.3 –––
t_d(on)
Turn-On Delay Time
––– 6.3 –––
t_r
Rise Time
––– 40 –––
t_d(off)
Turn-Off Delay Time
––– 49 –––
t_f
Fall Time
––– 47 –––
C_iss
Input Capacitance
––– 1150 –––
C_oss
Output Capacitance
––– 130 –––
C_rss
Reverse Transfer Capacitance
––– 67 –––
hà ^Coss ^{eff. (ER)} Effective Output Capacitance (Energy Related) ––– 190 –––
g ^Coss ^{eff. (TR)} Effective Output Capacitance (Time Related)
––– 230 –––
nC I_D = 25A
f ^{VDS = 30V}
V_GS = 10V
I_D = 25A, V_DS =0V, V_GS = 10V
ns V_DD = 39V
I_D = 25A
f ^{RG = 20Ω}
V_GS = 10V
V_GS = 0V
V_DS = 50V
pF ƒ = 1.0MHz
h V_GS = 0V, V_DS = 0V to 60V
g V_GS = 0V, V_DS = 0V to 60V
Diode Characteristics
Symbol
Parameter
Min. Typ. Max. Units
Conditions
I_S
Continuous Source Current
––– ––– 43 A MOSFET symbol
D
(Body Diode)
showing the
I_SM
Pulsed Source Current
Ù (Body Diode)
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
I_RRM
Reverse Recovery Current
t_on
Forward Turn-On Time
––– ––– 170
integral reverse
G
p-n junction diode.
S
––– ––– 1.3
f V T_J = 25°C, I_S = 25A, V_GS = 0V
––– 22 33 ns T_J = 25°C
V_R = 51V,
––– 26 39
T_J = 125°C
––– 17 26 nC T_J = 25°C
f ^{IF = 25A}
di/dt = 100A/μs
––– 24 36
T_J = 125°C
––– 1.4 ––– A T_J = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by max. junction
temperature.
‚ Limited by T_Jmax, starting T_J = 25°C, L = 0.23mH
R_G = 25Ω, I_AS = 25A, V_GS =10V. Part not recommended for
use above this value.
ƒ I_SD ≤ 25A, di/dt ≤ 1580A/μs, V_DD ≤ V_(BR)DSS, T_J ≤ 175°C.
„ Pulse width ≤ 400μs; duty cycle ≤ 2%.
… C_oss eff. (TR) is a fixed capacitance that gives the same charging time
as C_oss while V_DS is rising from 0 to 80% V_DSS.
† C_oss eff. (ER) is a fixed capacitance that gives the same energy as
C_oss while V_DS is rising from 0 to 80% V_DSS.
‡ When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application note #AN-994.
ˆ R_θ is measured at T_J approximately 90°C.
2014-8-23
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