IRFR3505PBF Datasheet, PDF (2/11 Pages) International Rectifier – HEXFET® Power MOSFET

IRFR/U3505PbF
Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
V_(BR)DSS
∆V_(BR)DSS/∆T_J
R_DS(on)
V_GS(th)
g_fs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
I_DSS
Drain-to-Source Leakage Current
I_GSS
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
L_D
Internal Drain Inductance
L_S
C_iss
C_oss
C_rss
C_oss
C_oss
C_oss eff.
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance …
Min. Typ. Max. Units
55 ––– ––– V
––– 0.057 ––– V/°C
––– 0.011 0.013 Ω
2.0 ––– 4.0 V
41 ––– ––– S
––– ––– 20 _µA
––– ––– 250
––– ––– 200
nA
––– ––– -200
––– 62 93
––– 17 26 nC
––– 22 33
––– 13 –––
––– 74 –––
ns
––– 43 –––
––– 54 –––
––– 4.5 –––
nH
––– 7.5 –––
––– 2030 –––
––– 470 ––– pF
––– 91 –––
––– 2600 –––
––– 330 –––
––– 630 –––
Conditions
V_GS = 0V, I_D = 250µA
Reference to 25°C, I_D = 1mA
V_GS = 10V, I_D = 30A „
V_DS = 10V, I_D = 250µA
V_DS = 25V, I_D = 30A
V_DS = 55V, V_GS = 0V
V_DS = 55V, V_GS = 0V, T_J = 125°C
V_GS = 20V
V_GS = -20V
I_D = 30A
V_DS = 44V
V_GS = 10V„
V_DD = 28V
I_D = 30A
R_G = 6.8Ω
V_GS = 10V „
Between lead,
D
6mm (0.25in.)
from package
G
and center of die contact
S
V_GS = 0V
V_DS = 25V
ƒ = 1.0MHz, See Fig. 5
V_GS = 0V, V_DS = 1.0V, ƒ = 1.0MHz
V_GS = 0V, V_DS = 44V, ƒ = 1.0MHz
V_GS = 0V, V_DS = 0V to 44V
Source-Drain Ratings and Characteristics
Parameter
I_S
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) 
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse RecoveryCharge
t_on
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
––– ––– 71
A ^{showing the}
integral reverse
G
––– ––– 280
p-n junction diode.
S
––– ––– 1.3 V T_J = 25°C, I_S = 30A, V_GS = 0V „
––– 70 105 ns T_J = 25°C, I_F = 30A, V_DD = 28V
––– 180 270 nC di/dt = 100A/µs „
Intrinsic turn-on time is negligible (turn-on is dominated by L_S+L_D)
2
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