IRFR2905ZTR Datasheet, PDF (2/11 Pages) Kersemi Electronic Co., Ltd. – Advanced Process Technology

AUIRFR2905Z
Static Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V_(BR)DSS
Drain-to-Source Breakdown Voltage
55 ––– ––– V V_GS = 0V, I_D = 250µA
e ^{∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.053 ––– V/°C Reference to 25°C, ID = 1mA}
R_DS(on)
Static Drain-to-Source On-Resistance ––– 11.1 14.5 ^mΩ V_GS = 10V, I_D = 36A
V_GS(th)
Gate Threshold Voltage
2.0 ––– 4.0 V V_DS = V_GS, I_D = 250µA
gfs
Forward Transconductance
20 ––– ––– S V_DS = 25V, I_D = 36A
R_G
Gate Input Resistance
––– 1.3 ––– Ω f = 1MHz, open drain
I_DSS
Drain-to-Source Leakage Current
––– ––– 20
––– ––– 250
µA
V_DS = 55V, V_GS = 0V
V_DS = 55V, V_GS = 0V, T_J = 125°C
I_GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
–––
–––
––– 200
––– -200
nA
V_GS = 20V
V_GS = -20V
Dynamic Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Q_g
Total Gate Charge
––– 29 44
I_D = 36A
Q_gs
Q_gd
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
–––
–––
7.7
12
–––
–––
e nC VDS = 44V
V_GS = 10V
t_d(on)
Turn-On Delay Time
––– 14 –––
V_DD = 28V
t_r
t_d(off)
t_f
Rise Time
Turn-Off Delay Time
Fall Time
–––
–––
–––
66
31
35
–––
–––
–––
ns
I_D = 36A
e ^{RG = 15 Ω}
V_GS = 10V
L_D
Internal Drain Inductance
L_S
Internal Source Inductance
Between lead,
D
––– 4.5 –––
nH ^{6mm (0.25in.)}
from package
G
––– 7.5 –––
and center of die contact
S
C_iss
Input Capacitance
––– 1380 –––
V_GS = 0V
C_oss
Output Capacitance
––– 240 –––
V_DS = 25V
C_rss
Reverse Transfer Capacitance
––– 120 –––
ƒ = 1.0MHz
C_oss
Output Capacitance
––– 820 ––– ^pF V_GS = 0V, V_DS = 1.0V, ƒ = 1.0MHz
C_oss
C_oss eff.
Output Capacitance
Effective Output Capacitance
––– 190 –––
––– 300 –––
f ^{VGS = 0V, VDS = 44V, ƒ = 1.0MHz}
V_GS = 0V, V_DS = 0V to 44V
Diode Characteristics
Parameter
I_S
Continuous Source Current
(Body Diode)
I_SM
Pulsed Source Current
Ù (Body Diode)
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
t_on
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
k ––– ––– 42
MOSFET symbol
A showing the
––– ––– 240
––– ––– 1.3
integral reverse
e ^{p-n junction diode.}
V T_J = 25°C, I_S = 36A, V_GS = 0V
––– 23
––– 16
35
24
e ^{ns TJ = 25°C, IF = 36A, VDD = 28V}
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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