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| IRFR220NTRR Datasheet, PDF (2/10 Pages) Kersemi Electronic Co., Ltd. – SMPS MOSFET | |||
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IRFR/U220NPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS Drain-to-Source Breakdown Voltage
âV(BR)DSS/âTJ Breakdown Voltage Temp. Coefficient
RDS(on)
VGS(th)
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
IDSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
IGSS
Gate-to-Source Reverse Leakage
Min. Typ. Max. Units
Conditions
200 âââ âââ
âââ 0.23 âââ
âââ âââ 600
2.0 âââ 4.0
V
V/°C
mâ¦
V
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA Â
VGS = 10V, ID = 2.9A Â
VDS = VGS, ID = 250µA
âââ âââ 25
âââ âââ 250
µA VDS = 200V, VGS = 0V
VDS = 160V, VGS = 0V, TJ = 150°C
âââ âââ 100 nA VGS = 20V
âââ âââ -100
VGS = -20V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max.
gfs
Forward Transconductance
2.6 âââ âââ
Qg
Total Gate Charge
âââ 15 23
Qgs
Gate-to-Source Charge
âââ 2.4 3.6
Qgd
Gate-to-Drain ("Miller") Charge
âââ 6.1 9.2
td(on)
Turn-On Delay Time
âââ 6.4 âââ
tr
Rise Time
âââ 11 âââ
td(off)
Turn-Off Delay Time
âââ 20 âââ
tf
Fall Time
âââ 12 âââ
Ciss
Input Capacitance
âââ 300 âââ
Coss
Output Capacitance
âââ 53 âââ
Crss
Reverse Transfer Capacitance
âââ 15 âââ
Coss
Output Capacitance
âââ 300 âââ
Coss
Output Capacitance
âââ 23 âââ
Coss eff. Effective Output Capacitance
âââ 46 âââ
Avalanche Characteristics
Units
S
nC
ns
pF
Conditions
VDS = 50V, ID = 2.9A
ID = 2.9A
VDS = 160V
VGS = 10V,
VDD = 100V
ID = 2.9A
RG = 24â¦
VGS = 10V Â
VGS = 0V
VDS = 25V
Æ = 1.0MHz
VGS = 0V, VDS = 1.0V, Æ = 1.0MHz
VGS = 0V, VDS = 160V, Æ = 1.0MHz
VGS = 0V, VDS = 0V to 160V Â
Parameter
EAS
Single Pulse Avalanche EnergyÂ
IAR
Avalanche CurrentÂ
EAR
Repetitive Avalanche EnergyÂ
Thermal Resistance
Typ.
âââ
âââ
âââ
Max.
46
2.9
4.3
Units
mJ
A
mJ
Parameter
Typ.
Max.
Units
RθJC
RθJA
RθJA
Junction-to-Case
Junction-to-Ambient (PCB mount)*
Junction-to-Ambient
âââ
3.5
âââ
50
°C/W
âââ
110
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) Â
MOSFET symbol
D
âââ âââ 5.0
A showing the
integral reverse
G
âââ âââ 20
p-n junction diode.
S
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
ton
Forward Turn-On Time
2
âââ âââ 1.3 V TJ = 25°C, IS = 2.9A, VGS = 0V Â
âââ 90 140 ns TJ = 25°C, IF = 2.9A
âââ 320 480 nC di/dt = 100A/µs Â
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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