IRFB7440GPBF Datasheet, PDF (2/8 Pages) International Rectifier – Brushed Motor drive applications

IRFB7440GPBF
Absolute Maximum Ratings
Symbol
Parameter
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_D @ T_C = 25°C
I_DM
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
d ^{Continuous Drain Current, VGS @ 10V (Wire Bond Limited)}
Pulsed Drain Current
P_D @T_C = 25°C
Maximum Power Dissipation
Linear Derating Factor
V_GS
Gate-to-Source Voltage
T_J
Operating Junction and
T_STG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
E_{AS (Thermally limited)}
E_{AS (tested)}
I_AR
E_AR
e Single Pulse Avalanche Energy
k Single Pulse Avalanche Energy Tested Value
Ãd Avalanche Current
d Repetitive Avalanche Energy
Thermal Resistance
Symbol
R_JC
R_CS
R_JA
Parameter
j Junction-to-Case
Case-to-Sink, Flat Greased Surface
Junction-to-Ambient
Static @ T_J = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ.
V_(BR)DSS
V_(BR)DSS/T_J
R_DS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
40 –––
––– 0.035
––– 2.0
––– 3.0
V_GS(th)
I_DSS
Gate Threshold Voltage
Drain-to-Source Leakage Current
2.2 3.0
––– –––
––– –––
I_GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
––– –––
––– –––
R_G
Internal Gate Resistance
––– 2.6
Max.
–––
–––
2.5
–––
3.9
1.0
150
100
-100
–––
Max.
208™
147™
120
772
208
1.4
± 20
-55 to + 175
300
x x 10lbf in (1.1N m)
Units
A
W
W/°C
V
°C
238
298
See Fig. 14, 15, 22a, 22b
Typ.
–––
0.50
–––
Max.
0.72
–––
62
mJ
A
mJ
Units
°C/W
Units
Conditions
V
V/°C
m
m
V
μA
nA

V_GS = 0V, I_D = 250μA
d Reference to 25°C, I_D = 5.0mA
g V_GS = 10V, I_D = 100A
g V_GS = 6.0V, I_D = 50A
V_DS = V_GS, I_D = 100μA
V_DS = 40V, V_GS = 0V
V_DS = 40V, V_GS = 0V, T_J = 125°C
V_GS = 20V
V_GS = -20V
Notes:
 Calculated continuous current based on maximum allowable junction … Pulse width  400μs; duty cycle  2%.
temperature. Bond wire current limit is 120A. Note that current
† C_oss eff. (TR) is a fixed capacitance that gives the same charging time
limitations arising from heating of the device leads may occur with
as C_oss while V_DS is rising from 0 to 80% V_DSS.
some lead mounting arrangements. (Refer to AN-1140)
‚ Repetitive rating; pulse width limited by max. junction
temperature.
ƒ Limited by T_Jmax, starting T_J = 25°C, L = 0.048mH
‡ C_oss eff. (ER) is a fixed capacitance that gives the same energy as
C_oss while V_DS is rising from 0 to 80% V_DSS.
ˆ R_ is measured at T_J approximately 90°C.
‰ This value determined from sample failure population,
R_G = 50, I_AS = 100A, V_GS =10V.
„ I_SD  100A, di/dt  1330A/μs, V_DD V_(BR)DSS, T_J  175°C.
starting T_J = 25°C, L= 0.048mH, R_G = 50, I_AS = 100A, V_GS =10V.
2014-8-13
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