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| IRFB4212 Datasheet, PDF (2/7 Pages) Kersemi Electronic Co., Ltd. – Key parameters optimized for Class-D audio amplifier applications | |||
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IRFB4212PBF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
âÎVDSS/âTJ
RDS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
100 âââ âââ V VGS = 0V, ID = 250µA
âââ 0.09 âââ V/°C Reference to 25°C, ID = 1mA
e âââ 58 72.5 m⦠VGS = 10V, ID = 13A
VGS(th)
âVGS(th)/âTJ
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
3.0 âââ 5.0
V VDS = VGS, ID = 250µA
âââ -13 âââ mV/°C
IDSS
Drain-to-Source Leakage Current
âââ âââ 20 µA VDS = 100V, VGS = 0V
âââ âââ 250
VDS = 100V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
âââ âââ 200 nA VGS = 20V
Gate-to-Source Reverse Leakage
âââ âââ -200
VGS = -20V
gfs
Forward Transconductance
11 âââ âââ S VDS = 50V, ID = 13A
Qg
Total Gate Charge
âââ 15 23
Qgs1
Pre-Vth Gate-to-Source Charge
âââ 3.3 âââ
VDS = 80V
Qgs2
Post-Vth Gate-to-Source Charge
âââ 1.4 âââ nC VGS = 10V
Qgd
Gate-to-Drain Charge
âââ 6.9 âââ
ID = 13A
Qgodr
Gate Charge Overdrive
âââ 3.4 âââ
See Fig. 6 and 19
Qsw
Switch Charge (Qgs2 + Qgd)
âââ 8.3 âââ
RG(int)
td(on)
Internal Gate Resistance
Turn-On Delay Time
âââ 2.2 âââ
âââ 7.7 âââ
â¦
Ãe VDD = 50V, VGS = 10V
tr
Rise Time
âââ 28 âââ
ID = 13A
td(off)
Turn-Off Delay Time
âââ 14 âââ ns RG = 2.5â¦
tf
Fall Time
âââ 3.9 âââ
Ciss
Input Capacitance
âââ 550 âââ
VGS = 0V
Coss
Output Capacitance
âââ 66 âââ pF VDS = 50V
Crss
Reverse Transfer Capacitance
âââ 35 âââ
Æ = 1.0MHz,
See Fig.5
Coss
Effective Output Capacitance
âââ 350 âââ
VGS = 0V, VDS = 0V to 80V
LD
Internal Drain Inductance
âââ 4.5 âââ
Between lead,
D
LS
Internal Source Inductance
nH 6mm (0.25in.)
G
âââ 7.5 âââ
from package
S
and center of die contact
Avalanche Characteristics
Parameter
EAS
d Single Pulse Avalanche Energy
IAR
EAR
Ãg Avalanche Current
g Repetitive Avalanche Energy
Typ.
Max.
âââ
25
See Fig. 14, 15, 17a, 17b
Units
mJ
A
mJ
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS @ TC = 25°C Continuous Source Current
âââ âââ 18
MOSFET symbol
(Body Diode)
A showing the
ISM
Pulsed Source Current
ÃÂ (Body Diode)
VSD
Diode Forward Voltage
âââ âââ 57
âââ âââ 1.3
integral reverse
p-n junction diode.
e V TJ = 25°C, IS = 13A, VGS = 0V
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
âââ 41
62
ns TJ = 25°C, IF = 13A
e âââ 69 100 nC di/dt = 100A/µs
Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
 Starting TJ = 25°C, L = 0.32mH, RG = 25â¦, IAS = 13A.
 Pulse width ⤠400µs; duty cycle ⤠2%.
 Rθ is measured at TJ of approximately 90°C.
Â
Limited by Tjmax. See Figs. 14, 15, 17a, 17b for repetitive
avalanche information
2014-8-9
2
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