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| IRFB23N15D Datasheet, PDF (2/11 Pages) International Rectifier – Power MOSFET(Vdss=150V, Rds(on)max=0.090ohm, Id=23A) | |||
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IRFB/IRFS/IRFSL23N15D
Static @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS Drain-to-Source Breakdown Voltage
âV(BR)DSS/âTJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
IGSS
Gate-to-Source Reverse Leakage
Min. Typ. Max. Units
Conditions
150
âââ
âââ
3.0
âââ âââ
0.18 âââ
âââ 0.090
âââ 5.5
V VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1mA
⦠VGS = 10V, ID = 14A Â
V VDS = VGS, ID = 250µA
âââ âââ 25
âââ âââ 250
µA VDS = 150V, VGS = 0V
VDS = 120V, VGS = 0V, TJ = 150°C
âââ âââ 100 nA VGS = 30V
âââ âââ -100
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max.
gfs
Forward Transconductance
11 âââ âââ
Qg
Total Gate Charge
âââ 37 56
Qgs
Gate-to-Source Charge
âââ 9.6 14
Qgd
Gate-to-Drain ("Miller") Charge
âââ 19 29
td(on)
Turn-On Delay Time
âââ 10 âââ
tr
Rise Time
âââ 32 âââ
td(off)
Turn-Off Delay Time
âââ 18 âââ
tf
Fall Time
âââ 8.4 âââ
Ciss
Input Capacitance
âââ 1200 âââ
Coss
Output Capacitance
âââ 260 âââ
Crss
Reverse Transfer Capacitance
âââ 65 âââ
Coss
Output Capacitance
âââ 1520 âââ
Coss
Output Capacitance
âââ 120 âââ
Coss eff. Effective Output Capacitance
Avalanche Characteristics
âââ 210 âââ
Units
S
nC
ns
pF
Conditions
VDS = 25V, ID = 14A
ID = 14A
VDS = 120V
VGS = 10V, Â
VDD = 75V
ID = 14A
RG = 5.1â¦
VGS = 10V Â
VGS = 0V
VDS = 25V
Æ = 1.0MHzÂ
VGS = 0V, VDS = 1.0V, Æ = 1.0MHz
VGS = 0V, VDS = 120V, Æ = 1.0MHz
VGS = 0V, VDS = 0V to 120V Â
Parameter
EAS
Single Pulse Avalanche EnergyÂ
IAR
Avalanche CurrentÂ
EAR
Repetitive Avalanche EnergyÂ
Thermal Resistance
Typ.
âââ
âââ
âââ
Max.
260
14
13.6
Units
mJ
A
mJ
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
RθCS
Case-to-Sink, Flat, Greased Surface Â
RθJA
Junction-to-AmbientÂ
RθJA
Junction-to-AmbientÂ
Diode Characteristics
âââ
0.50
âââ
âââ
1.1
âââ
°C/W
62
40
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) Â
MOSFET symbol
D
âââ âââ 23
A showing the
integral reverse
G
âââ âââ 92
p-n junction diode.
S
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
âââ âââ 1.3
âââ 150 220
âââ 0.8 1.2
V TJ = 25°C, IS = 14A, VGS = 0V Â
ns TJ = 25°C, IF = 14A
µC di/dt = 100A/µs Â
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2014-8-13
2
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