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IRFB17N60K Datasheet, PDF (2/7 Pages) International Rectifier – SMPS MOSFET
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IRFB17N60K, SiHFB17N60K
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
RthJA
RthCS
Maximum Junction-to-Case (Drain)
RthJC
TYP.
-
0.50
-
MAX.
58
-
0.37
UNIT
°C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
ΔVDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0 V, ID = 250 µA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 µA
VGS = ± 30 V
VDS = 600 V, VGS = 0 V
VDS = 480 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 10 Ab
VDS = 50 V, ID = 10 A
600
-
-
V
-
600
- mV/°C
3.0
-
5.0
V
-
-
± 100 nA
-
-
50
µA
-
-
250
-
0.35 0.42
Ω
5.9
-
-
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Ciss
Coss
Crss
Coss
Coss eff.
VGS = 0 V,
-
2700
-
VDS = 25 V,
-
240
-
f = 1.0 MHz, see fig. 5
-
21
-
pF
VGS = 0 V VDS = 1.0 V , f = 1.0 MHz -
2950
-
VGS = 0 V VDS = 480 V , f = 1.0 MHz -
67
-
VGS = 0 V
VDS = 0 V to 480 V
-
120
-
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
-
-
99
ID = 17 A, VDS = 480 V
Qgs
VGS = 10 V
-
-
32
nC
see fig. 6 and 13
Qgd
-
-
47
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
td(on)
tr
td(off)
tf
-
25
-
VDD = 300 V, ID = 17 A,
-
82
-
ns
RG = 7.5 Ω, VGS = 10 V, see fig. 10b
-
38
-
-
32
-
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
Pulsed Diode Forward Currenta
ISM
integral reverse
p - n junction diode
D
G
S
-
-
17
A
-
-
68
Body Diode Voltage
VSD
TJ = 25 °C, IS = 17 A, VGS = 0 Vb
-
-
1.5
V
Body Diode Reverse Recovery Time
trr
-
TJ = 25 °C, IF = 17 A, dI/dt = 100 A/µsb
520
780
ns
Body Diode Reverse Recovery Charge
Qrr
-
5620 8430 nC
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
-
TJ = 125 °C, IF = 17 A, dI/dt = 100 A/µsb
580
870
ns
Qrr
-
6470 9700 nC
Forward Turn-On Time
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating, pulse width limited by max. junction temperature.
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
2
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