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IRFB16N60L Datasheet, PDF (2/7 Pages) International Rectifier – SMPS MOSFET
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IRFB16N60L, SiHFB16N60L
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
RthJA
RthJC
TYP.
-
-
MAX.
62
0.4
UNIT
°C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
ΔVDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0 V, ID = 250 µA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 µA
VGS = ± 30 V
VDS = 600 V, VGS = 0 V
VDS = 480 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 9.0 Ab
VDS = 50 V, ID = 9.0 A
600
-
-
V
-
0.39
-
V/°C
3.0
-
5.0
V
-
-
± 100 nA
-
-
50
µA
-
-
2.0 mA
-
0.385 0.460 Ω
8.3
-
-
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance
Effective Output Capacitance
(Energy Related)
Ciss
Coss
Crss
Coss eff.
Coss eff. (ER)
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
VGS = 0 V
VDS = 0 V to 480 Vc
-
2720
-
-
26
-
-
20
-
pF
-
120
-
-
100
-
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
-
ID = 16 A, VDS = 480 V,
see fig. 7 and 15b
-
-
VGS = 10 V
-
VDD = 300 V, ID = 16 A,
-
RG = 1.8 Ω,
see fig. 11a and 11bb
-
-
-
100
-
30
nC
-
46
20
-
44
-
ns
28
-
5.5
-
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
integral reverse
Pulsed Diode Forward Currenta
ISM
p - n junction diode
D
G
S
-
-
16
A
-
-
60
Body Diode Voltage
VSD
TJ = 25 °C, IS = 16 A, VGS = 0 Vb
-
-
1.5
V
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Time
TJ = 25 °C, IF = 16 A,
TJ = 125 °C, dI/dt = 100 A/µsb
-
130 200
ns
-
240 360
Body Diode Reverse Recovery Charge
Qrr
Body Diode Reverse Recovery Charge
TJ = 25 °C, IS = 16 A,
TJ = 125 °C, dI/dt = 100 A/µsb
-
450 670
nC
-
1080 1620
Body Diode Reverse Recovery Current
Forward Turn-On Time
IRRM
ton
TJ = 25 °C
-
5.8
8.7
A
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80 % VDS.
Coss eff. (ER) is a fixed capacitance that stores the same energy as Coss whil VDS is rising from 0 to 80 % VDS.
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