IRF9520NS Datasheet, PDF (2/10 Pages) International Rectifier – Power MOSFET(Vdss=-100V, Rds(on)=0.48ohm, Id=-6.8A)

IRF9520NS/L
Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
V_(BR)DSS Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
R_DS(on)
Static Drain-to-Source On-Resistance
V_GS(th)
Gate Threshold Voltage
g_fs
Forward Transconductance
I_DSS
Drain-to-Source Leakage Current
I_GSS
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
L_S
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Source Inductance
C_iss
Input Capacitance
C_oss
Output Capacitance
C_rss
Reverse Transfer Capacitance
Min.
-100
–––
–––
-2.0
1.4
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max.
––– –––
-0.10 –––
––– 0.48
––– -4.0
––– –––
––– -25
––– -250
––– 100
––– -100
––– 27
––– 5.0
––– 15
14 –––
47 –––
28 –––
31 –––
7.5 ^{–––}
350 –––
110 –––
70 –––
Units
V
V/°C
Ω
V
S
µA
nA
nC
ns
nH
pF
Conditions
V_GS = 0V, I_D = -250µA
Reference to 25°C, I_D = -1mA…
V_GS = 10V, I_D = -4.0A „
V_DS = V_GS, I_D = -250µA
V_DS = -50V, I_D = -4.0A…
V_DS = -100V, V_GS = 0V
V_DS = -80V, V_GS = 0V, T_J = 150°C
V_GS = 20V
V_GS = -20V
I_D = -4.0A
V_DS = -80V
V_GS = -10V, See Fig. 6 and 13 „…
V_DD = -50V
I_D = -4.0A
R_G = 22Ω
R_D = 12Ω, See Fig. 10 „…
Between lead,
and center of die contact
V_GS = 0V
V_DS = -25V
ƒ = 1.0MHz, See Fig. 5…
Source-Drain Ratings and Characteristics
Parameter
I_S
Continuous Source Current
(Body Diode)
I_SM
Pulsed Source Current
(Body Diode) 
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
t_on
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
––– ––– -6.8 _{A showing the}
––– ––– ^-27
integral reverse
G
p-n junction diode.
S
––– ––– -1.6 V T_J = 25°C, I_S = -4.0A, V_GS = 0V „
––– 100 150 ns T_J = 25°C, I_F = -4.0A
___ 420 630 nC di/dt = -100A/µs „
Intrinsic turn-on time is negligible (turn-on is dominated by L_S+L_D)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ Starting T_J = 25°C, L = 18mH
R_G = 25Ω, I_AS = -4.0A. (See Figure 12)
ƒ I_SD ≤ -4.0A, di/dt ≤ -300A/µs, V_DD ≤ V_(BR)DSS,
T_J ≤ 175°C
„ Pulse width ≤ 300µs; duty cycle ≤ 2%
… Uses IRF9520N data and test conditions
2014-8-30
2
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