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IRF9520NL Datasheet, PDF (2/10 Pages) Kersemi Electronic Co., Ltd. – Advanced Process Technology | |||
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IRF9520NL
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS Drain-to-Source Breakdown Voltage
âV(BR)DSS/âTJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Source Inductance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Min.
-100
âââ
âââ
-2.0
1.4
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
Typ. Max.
âââ âââ
-0.10 âââ
âââ 0.48
âââ -4.0
âââ âââ
âââ -25
âââ -250
âââ 100
âââ -100
âââ 27
âââ 5.0
âââ 15
14 âââ
47 âââ
28 âââ
31 âââ
7.5 âââ
350 âââ
110 âââ
70 âââ
Units
V
V/°C
â¦
V
S
µA
nA
nC
ns
nH
pF
Conditions
VGS = 0V, ID = -250µA
Reference to 25°C, ID = -1mAÂ
VGS = 10V, ID = -4.0A Â
VDS = VGS, ID = -250µA
VDS = -50V, ID = -4.0AÂ
VDS = -100V, VGS = 0V
VDS = -80V, VGS = 0V, TJ = 150°C
VGS = 20V
VGS = -20V
ID = -4.0A
VDS = -80V
VGS = -10V, See Fig. 6 and 13 ÂÂ
VDD = -50V
ID = -4.0A
RG = 22â¦
RD = 12â¦, See Fig. 10 ÂÂ
Between lead,
and center of die contact
VGS = 0V
VDS = -25V
Æ = 1.0MHz, See Fig. 5Â
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) Â
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
âââ âââ -6.8 A showing the
âââ âââ -27
integral reverse
G
p-n junction diode.
S
âââ âââ -1.6 V TJ = 25°C, IS = -4.0A, VGS = 0V Â
âââ 100 150 ns TJ = 25°C, IF = -4.0A
___ 420 630 nC di/dt = -100A/µs Â
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
 Starting TJ = 25°C, L = 18mH
RG = 25â¦, IAS = -4.0A. (See Figure 12)
 ISD ⤠-4.0A, di/dt ⤠-300A/µs, VDD ⤠V(BR)DSS,
TJ ⤠175°C
 Pulse width ⤠300µs; duty cycle ⤠2%
Â
Uses IRF9520N data and test conditions
2014-8-30
2
www.kersemi.com
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