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IRF840A Datasheet, PDF (2/8 Pages) International Rectifier – Power MOSFET(Vdss=500V, Rds(on)max=0.85ohm, Id=8.0A) | |||
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IRF840A
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 500
âV(BR)DSS/âTJ Breakdown Voltage Temp. Coefficient âââ
RDS(on)
Static Drain-to-Source On-Resistance âââ
VGS(th)
Gate Threshold Voltage
2.0
IDSS
Drain-to-Source Leakage Current
âââ
âââ
Gate-to-Source Forward Leakage
âââ
IGSS
Gate-to-Source Reverse Leakage
âââ
âââ
0.58
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
0.85
4.0
25
250
100
-100
V VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1mA
⦠VGS = 10V, ID = 4.8A Â
V VDS = VGS, ID = 250µA
µA VDS = 500V, VGS = 0V
VDS = 400V, VGS = 0V, TJ = 125°C
nA VGS = 30V
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
gfs
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
3.7 âââ âââ
âââ âââ 38
âââ âââ 9.0
âââ âââ 18
âââ 11 âââ
âââ 23 âââ
âââ 26 âââ
âââ 19 âââ
âââ 1018 âââ
âââ 155 âââ
âââ 8.0 âââ
âââ 1490 âââ
âââ 42 âââ
âââ 56 âââ
S VDS = 50V, ID = 4.8A
ID = 8.0A
nC VDS = 400V
VGS = 10V, See Fig. 6 and 13 Â
VDD = 250V
ns ID = 8.0A
RG = 9.1â¦
RD = 31â¦,See Fig. 10 Â
VGS = 0V
VDS = 25V
pF Æ = 1.0MHz, See Fig. 5
VGS = 0V, VDS = 1.0V, Æ = 1.0MHz
VGS = 0V, VDS = 400V, Æ = 1.0MHz
VGS = 0V, VDS = 0V to 400V Â
Avalanche Characteristics
Parameter
EAS
Single Pulse Avalanche EnergyÂ
IAR
Avalanche CurrentÂ
EAR
Repetitive Avalanche EnergyÂ
Thermal Resistance
Typ.
âââ
âââ
âââ
Max.
510
8.0
13
Units
mJ
A
mJ
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
RθCS
Case-to-Sink, Flat, Greased Surface
RθJA
Junction-to-Ambient
Diode Characteristics
âââ
0.50
1.0
âââ
°C/W
62
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) Â
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
âââ âââ 8.0
A showing the
integral reverse
G
âââ âââ 32
p-n junction diode.
S
âââ âââ 2.0 V TJ = 25°C, IS = 8.0A, VGS = 0V Â
âââ 422 633 ns TJ = 25°C, IF = 8.0A
âââ 2.0 3.0 µC di/dt = 100A/µs Â
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2014-8-12
2
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