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| DB3TG Datasheet, PDF (2/4 Pages) STMicroelectronics – DIAC | |||
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DB3TG
ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise specified)
Symbol
Parameter
Test Conditions
VBO
Breakover voltage *
I VBO1 - VBO2 I Breakover voltage
symmetry
âV
Dynamic breakover
voltage *
VO
Output voltage *
IBO
Breakover current *
tr
Rise time *
IR
Leakage current *
* Applicable to both forward and reverse directions.
** Connected in parallel to the device.
C = 22nF **
C = 22nF **
VBO and VF at
10mA
see diagram 2
(R=20â¦)
C = 22nF **
see diagram 3
VR = 0.5 VBO max
MIN.
TYP.
MAX.
MAX.
MIN.
MIN.
MAX.
MAX.
MAX.
Value
Unit
30
V
32
34
±2
V
9
V
5
V
15
µA
2
µs
10
µA
ORDERING INFORMATION
DB 3 TG
Diac Series
Breakover voltage
3: VBO typ = 32V
Special VBO range
OTHER INFORMATION
Part Number
Marking
DB3TG
DB3TG (Blue Body Coat)
Weight
0.15 g
Base Quantity
5000
Packing Mode
Tape & Reel
2/4
www.kersemi.com
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