BTB16-700C Datasheet, PDF (2/6 Pages) Kersemi Electronic Co., Ltd. – 16 A Snubberless, logic level and standard Triacs

BTA16, BTB16
T1610, T1635
Table 2. Absolute maximum ratings
Symbol
Parameter
I_T(RMS)
On-state rms current
(full sine wave)
D²PAK /
TO-220AB
TO-220AB
insulated
I_TSM
I^²t
dI/dt
V_DSM/
V_RSM
I_GM
P_G(AV)
T_stg
T_j
Non repetitive surge peak on-state
current
(full cycle, T_j initial = 25 °C)
I^²t value for fusing
F = 50 Hz
F = 60 Hz
t_p = 10 ms
Critical rate of rise of on-state current
I_G = 2 x I_GT , t_r ≤ 100 ns
F = 120 Hz
Non repetitive surge peak off-state
voltage
t_p = 10 ms
Peak gate current
Average gate power dissipation
t_p = 20 µs
Storage temperature range
Maximum operating junction temperature
Value
T_c = 100 °C
16
T_c = 86 °C
t = 20 ms
160
t = 16.7 ms
168
144
T_j = 125 °C
50
T_j = 25 °C
V_DRM/V_RRM
+ 100
T_j = 125 °C
T_j = 125 °C
4
1
-40 to + 150
-40 to + 125
Unit
A
A
A^²s
A/µs
V
A
W
Table 3.
Electrical characteristics (T_j = 25 °C, unless otherwise specified)
Snubberless and logic level (3 quadrants)
Symbol Test conditions Quadrant
BTA16 / BTB16
T1610 T1635
SW CW BW
I_GT ⁽¹⁾
V_GT
V_GD
I_H ⁽²⁾
V_D = 12 V
R_L = 33 Ω
V_D = V_DRM
R_L = 3.3 kΩ
T_j = 125 °C
I_T = 500 mA
I_L
I_G = 1.2 I_GT
I - II - III Max. 10 35 10 35 50
I - II - III Max.
1.3
I - II - III Min.
0.2
Max. 15 35 15 35 50
I - III
25 50 25 50 70
Max.
II
30 60 30 60 80
dV/dt ⁽²⁾
V_D = 67 %V_DRM
gate open
T_j = 125 °C Min.
40
500
40 500 1000
(dV/dt)c = 0.1 V/µs T_j = 125 °C
8.5
-
8.5
-
-
(dI/dt)c
(2)
(dV/dt)c = 10 V/µs
T_j = 125 °C
Min.
3.0
-
3.0 -
-
Without snubber T_j = 125 °C
-
8.5
-
8.5 14
1. Minimum IGT is guaranted at 5% of I_GT max
2. For both polarities of A2 referenced to A1
Unit
mA
V
V
mA
mA
V/µs
A/ms
2014-6-9
2
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