BTB08-600CW Datasheet, PDF (2/4 Pages) Kersemi Electronic Co., Ltd. – SENSITIVE GATE TRIACS

THERMAL RESISTANCES
Symbol
Rth (j-a) Junction to ambient
Rth (j-c) DC Junction to case for DC
Parameter
Rth (j-c) AC Junction to case for 360° conduction angle
( F= 50 Hz)
BTA08 S/A / BTB08 S/A
Value
Unit
60
°C/W
BTA
4.4
°C/W
BTB
3.2
BTA
3.3
°C/W
BTB
2.4
GATE CHARACTERISTICS (maximum values)
PG _(AV) = 1W PGM = 10W (tp = 20 µs) IGM = 4A (tp = 20 µs)
VGM = 16V (tp = 20 µs).
ELECTRICAL CHARACTERISTICS
Symbol
Test Conditions
Quadrant
IGT
VD=12V (DC) RL=33Ω
Tj=25°C
VGT
VGD
tgt
IL
VD=12V (DC) RL=33Ω
VD=VDRM RL=3.3kΩ
VD=VDRM IG = 40mA
dIG/dt = 0.5A/µs
IG= 1.2 IGT
Tj=25°C
Tj=110°C
Tj=25°C
Tj=25°C
IH *
VTM *
IDRM
IRRM
IT= 100mA gate open
ITM= 11A tp= 380µs
VDRM Rated
VRRM Rated
Tj=25°C
Tj=25°C
Tj=25°C
Tj=110°C
dV/dt *
Linear slope up to VD=67%VDRM
gate open
Tj=110°C
(dV/dt)c * (dI/dt)c= 3.5A/ms
Tj=110°C
* For either polarity of electrode A2 voltage with reference to electrode A1.
I-II-III
IV
I-II-III-IV
I-II-III-IV
I-II-III-IV
I-III-IV
II
MAX
MAX
MAX
MIN
TYP
TYP
MAX
MAX
MAX
MAX
MIN
TYP
Suffix
S
A
10 10
10 25
1.5
0.2
2
20 20
40 40
25 25
1.75
0.01
0.75
10 10
5
5
Unit
mA
V
V
µs
mA
mA
V
mA
V/µs
V/µs
2014-6-9
1
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