BTA12-600BW Datasheet, PDF (2/5 Pages) STMicroelectronics – Medium current triac

BTA/BTB12 and T12 Series
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
s SNUBBERLESS™ and LOGIC LEVEL (3 Quadrants)
Symbol
Test Conditions Quadrant
T12
T1235 TW
I_GT (1)
V_GT
V_D = 12 V
I - II - III MAX.
R_L = 30 Ω
I - II - III MAX.
35
5
V_GD
V_D = V_DRM R_L = 3.3 kΩ I - II - III MIN.
Tj = 125°C
I_H (2) I_T = 100 mA
MAX. 35
10
I_L
I_G = 1.2 I_GT
I - III MAX. 50
10
II
60
15
dV/dt (2) V_D = 67 %V_DRM gate open
Tj = 125°C
MIN. 500
20
(dI/dt)c (2) (dV/dt)c = 0.1 V/µs Tj = 125°C
MIN.
-
3.5
(dV/dt)c = 10 V/µs Tj = 125°C
-
1
Without snubber Tj = 125°C
6.5
-
BTA/BTB12
SW
CW
BW
10
35
50
1.3
0.2
15
35
50
25
50
70
30
60
80
40
500 1000
6.5
-
-
2.9
-
-
-
6.5
12
Unit
mA
V
V
mA
mA
V/µs
A/ms
s STANDARD (4 Quadrants)
Symbol
Test Conditions
Quadrant
I_GT (1)
V_GT
V_GD
I_H (2)
I_L
V_D = 12 V R_L = 30 Ω
V_D = V_DRM R_L = 3.3 kΩ Tj = 125°C
I_T = 500 mA
I_G = 1.2 I_GT
dV/dt (2) V_D = 67 %V_DRM gate open Tj = 125°C
(dV/dt)c (2) (dI/dt)c = 5.3 A/ms
Tj = 125°C
I - II - III
IV
ALL
ALL
I - III - IV
II
MAX.
MAX.
MIN.
MAX.
MAX.
MIN.
MIN.
BTA/BTB12
C
B
25
50
50
100
1.3
0.2
25
50
40
50
80
100
200
400
5
10
Unit
mA
V
V
mA
mA
V/µs
V/µs
STATIC CHARACTERISTICS
Symbol
V_T (2)
V_to (2)
R_d (2)
I_DRM
I_RRM
Test Conditions
I_TM = 17 A tp = 380 µs
Threshold voltage
Tj = 25°C
Tj = 125°C
Dynamic resistance
V_DRM = V_RRM
Tj = 125°C
Tj = 25°C
Tj = 125°C
Note 1: minimum IGT is guaranted at 5% of IGT max.
Note 2: for both polarities of A2 referenced to A1
MAX.
MAX.
MAX.
MAX.
Value
Unit
1.55
V
0.85
V
35
mΩ
5
µA
1
mA
2014-6-9
2
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