BT136-500D Datasheet, PDF (2/4 Pages) Kersemi Electronic Co., Ltd. – Glass passivated triacs in a plastic

BT136 series
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
R_{th j-mb}
R_{th j-a}
Thermal resistance
full cycle
junction to mounting base half cycle
Thermal resistance
in free air
junction to ambient
MIN.
-
-
-
TYP.
-
-
60
MAX.
3.0
3.7
-
UNIT
K/W
K/W
K/W
STATIC CHARACTERISTICS
T_j = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN. TYP.
MAX.
UNIT
BT136-
... ...F ...G
I_GT
Gate trigger current
V_D = 12 V; I_T = 0.1 A
T2+ G+
-
5
35 25 50 mA
T2+ G-
-
8
35 25 50 mA
T2- G-
-
11 35 25 50 mA
T2- G+
-
30 70 70 100 mA
I_L
Latching current
V_D = 12 V; I_GT = 0.1 A
T2+ G+
-
7
20 20 30 mA
T2+ G-
-
16 30 30 45 mA
T2- G-
-
5
20 20 30 mA
T2- G+
-
7
30 30 45 mA
I_H
Holding current
V_D = 12 V; I_GT = 0.1 A
-
5
15 15 30 mA
V_T
On-state voltage
I_T = 5 A
-
1.4
1.70
V
V_GT
Gate trigger voltage
V_D = 12 V; I_T = 0.1 A
-
0.7
1.5
V
V_D = 400 V; I_T = 0.1 A;
0.25 0.4
-
V
T_j = 125 ˚C
I_D
Off-state leakage current V_D = V_DRM(max);
-
0.1
0.5
mA
T_j = 125 ˚C
DYNAMIC CHARACTERISTICS
T_j = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
BT136- ... ...F ...G
dV_D/dt
Critical rate of rise of
off-state voltage
V_DM = 67% V_DRM(max);
100 50 200 250
T_j = 125 ˚C; exponential
waveform; gate open
circuit
dV_com/dt Critical rate of change of V_DM = 400 V; T_j = 95 ˚C;
-
commutating voltage
I_T(RMS) = 4 A;
dI_com/dt = 1.8 A/ms; gate
open circuit
-
10 50
t_gt
Gate controlled turn-on I_TM = 6 A; V_D = V_DRM(max);
-
-
-
2
time
I_G = 0.1 A; dI_G/dt = 5 A/µs
- V/µs
- V/µs
-
µs
2014-6-10
2
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