BCR3KM-12 Datasheet, PDF (2/12 Pages) Renesas Technology Corp – Triac Low Power Use

BCR3KM-12
Parameter
RMS on-state current
Surge on-state current
I²t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Mass
Isolation voltage
Notes: 1. Gate open.
Symbol
I_T(RMS)
I_TSM
I²t
P_GM
P_G(AV)
V_GM
I_GM
Tj
Tstg
—
V_iso
Ratings
3.0
30
3.7
3
0.3
6
0.5
– 40 to +125
– 40 to +125
2.0
2000
Unit
Conditions
A
Commercial frequency, sine full wave
360° conduction, Tc = 111°C
A
60Hz sinewave 1 full cycle, peak value,
non-repetitive
A²s
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
W
W
V
A
°C
°C
g
V
Ta = 25°C, AC 1 minute,
T₁·T₂·G terminal to case
Electrical Characteristics
Parameter
Repetitive peak off-state current
On-state voltage
Symbol
I_DRM
V_TM
Min.
—
—
Typ.
—
—
Max.
2.0
1.5
Unit
mA
V
Gate trigger voltage^Note2
I
V_{FGT I}
—
—
1.5
V
II
V_{RGT I}
—
—
1.5
V
Gate trigger current^Note2
III
V_{RGT III}
—
I
I_{FGT I}
—
II
I_{RGT I}
—
III
I_{RGT III}
—
—
1.5
V
—
15^Note3
mA
—
15^Note3
mA
—
15^Note3
mA
Gate non-trigger voltage
V_GD
0.2
—
—
V
Thermal resistance
R_th(j-c)
—
—
4.0
°C/W
Thermal resistance
R_th(j-a)
—
—
50
°C/W
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. High sensitivity (I_GT ≤ 10 mA) is also available. (I_GT item: 1)
4. The contact thermal resistance R_{th (c-f)} in case of greasing is 0.5°C/W.
Test conditions
Tj = 125°C, V_DRM applied
Tc = 25°C, I_TM = 4.5 A,
Instantaneous measurement
Tj = 25°C, V_D = 6 V, R_L = 6 Ω,
R_G = 330 Ω
Tj = 25°C, V_D = 6 V, R_L = 6 Ω,
R_G = 330 Ω
Tj = 125°C, V_D = 1/2V_DRM
Junction to case^Note4
Junction to ambient
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