AO3406 Datasheet, PDF (2/4 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor

KSM3406
Electrical Characteristics (T_J=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BV_DSS Drain-Source Breakdown Voltage
I_D=250µA, V_GS=0V
30
V
I_DSS
Zero Gate Voltage Drain Current
V_DS=24V, V_GS=0V
T_J=55°C
1
µA
5
I_GSS
Gate-Body leakage current
V_DS=0V, V_GS=±20V
100 nA
V_GS(th) Gate Threshold Voltage
V_DS=V_GS I_D=250µA
1
1.9
3
V
I_D(ON)
On state drain current
V_GS=10V, V_DS=5V
15
A
R_DS(ON) Static Drain-Source On-Resistance
V_GS=10V, I_D=3.6A
T_J=125°C
50
65
mΩ
74 100
V_GS=4.5V, I_D=2.8A
75 105 ^mΩ
g_FS
Forward Transconductance
V_DS=5V, I_D=3.6A
7
S
V_SD
Diode Forward Voltage
I_S=1A
0.79 1
V
I_S
Maximum Body-Diode Continuous Current
2.5
A
DYNAMIC PARAMETERS
C_iss
Input Capacitance
C_oss
Output Capacitance
C_rss
Reverse Transfer Capacitance
R_g
Gate resistance
V_GS=0V, V_DS=15V, f=1MHz
V_GS=0V, V_DS=0V, f=1MHz
288 375 pF
57
pF
39
pF
3
6
Ω
SWITCHING PARAMETERS
Q_g(10V)
Q_g(4.5V)
Q_gs
Q_gd
t_D(on)
t_r
t_D(off)
t_f
t_rr
Q_rr
Total Gate Charge
Total Gate Charge
Gate Source Charge
V_GS=10V, V_DS=15V, I_D=3.6A
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
V_GS=10V, V_DS=15V, R_L=2.2Ω,
R_GEN=3Ω
Turn-Off Fall Time
Body Diode Reverse Recovery Time ^IF^{=3.6A, dI/dt=100A/µs}
Body Diode Reverse Recovery Charge ^IF^{=3.6A, dI/dt=100A/µs}
6.5 8.5 nC
3.1
4
nC
1.2
nC
1.6
nC
4.6
ns
1.9
ns
20.1
ns
2.6
ns
10.2 14
ns
3.5
nC
A: The value of R_θJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with T_A =25°C.
The value in any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R _θJA is the sum of the thermal impedence from junction to lead R_θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in² FR-4 board with 2oz. Copper, in a still air environment with T_A=25°C. The
SOA curve provides a single pulse rating.
2014-5-27
2
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