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AO3403 Datasheet, PDF (2/4 Pages) Alpha & Omega Semiconductors – P-Channel Enhancement Mode Field Effect Transistor
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KSM3403
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=-250µA, VGS=0V
-30
IDSS
Zero Gate Voltage Drain Current
VDS=-24V, VGS=0V
TJ=55°C
IGSS
Gate-Body leakage current
VDS=0V, VGS=±12V
VGS(th) Gate Threshold Voltage
VDS=VGS ID=-250µA
-0.6
ID(ON)
On state drain current
VGS=-4.5V, VDS=-5V
-10
VGS=-10V, ID=-2.6A
RDS(ON) Static Drain-Source On-Resistance
VGS=-4.5V, ID=-2A
TJ=125°C
VGS=-2.5V, ID=-1A
gFS
Forward Transconductance
VDS=-5V, ID=-2.5A
3
VSD
Diode Forward Voltage
IS=-1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=-15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
Gate Source Charge
VGS=-4.5V, VDS=-15V, ID=-2.5A
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
tD(off)
Turn-On Rise Time
Turn-Off DelayTime
VGS=-10V, VDS=-15V, RL=6Ω,
RGEN=3Ω
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time IF=-2.5A, dI/dt=100A/µs
Qrr
Body Diode Reverse Recovery Charge IF=-2.5A, dI/dt=100A/µs
Typ Max Units
V
-1
µA
-5
±100 nA
-1 -1.4 V
A
102 130
mΩ
154 200
128 180 mΩ
187 260 mΩ
4.5
S
-0.85 -1
V
-2
A
409 500 pF
55
pF
42
pF
12
16
Ω
4.4 5.3 nC
0.8
nC
1.32
nC
5.3
8
ns
4.4
9
ns
31.5 45
ns
8
16
ns
15.8 19
ns
8
12 nC
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C.
The value in any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
SOA curve provides a single pulse rating.
Rev 5: June 2005
2014-5-26
2
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