AO3401A Datasheet, PDF (2/5 Pages) Alpha & Omega Semiconductors – P-Channel Enhancement Mode Field Effect Transistor

Electrical Characteristics (T_J=25°C unless otherwise noted)
KSM3401A
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BV_DSS Drain-Source Breakdown Voltage
I_D=-250µA, V_GS=0V
-30
I_DSS
Zero Gate Voltage Drain Current
V_DS=-30V, V_GS=0V
T_J=55°C
I_GSS
Gate-Body leakage current
V_DS=0V, V_GS= ±12V
V_GS(th) Gate Threshold Voltage
V_DS=V_GS I_D=-250µA
-0.5
I_D(ON)
On state drain current
V_GS=-10V, V_DS=-5V
-27
V_GS=-10V, I_D=-4.0A
R_DS(ON) Static Drain-Source On-Resistance
T_J=125°C
V_GS=-4.5V, I_D=-3.5A
V_GS=-2.5V, I_D=-2.5A
g_FS
Forward Transconductance
V_DS=-5V, I_D=-4.0A
V_SD
Diode Forward Voltage
I_S=-1A,V_GS=0V
I_S
Maximum Body-Diode Continuous Current
V
-1
µA
-5
±100 nA
-0.9 -1.3 V
A
41
50
mΩ
62
75
47
60 mΩ
60
85 mΩ
17
S
-0.7 -1
V
-2
A
DYNAMIC PARAMETERS
C_iss
Input Capacitance
C_oss
Output Capacitance
C_rss
Reverse Transfer Capacitance
R_g
Gate resistance
V_GS=0V, V_DS=-15V, f=1MHz
V_GS=0V, V_DS=0V, f=1MHz
645
pF
80
pF
55
pF
4
7.8 12
Ω
SWITCHING PARAMETERS
Q_g(10V) Total Gate Charge
14
nC
Q_g(4.5V) Total Gate Charge
Q_gs
Gate Source Charge
7
nC
V_GS=-10V, V_DS=-15V, I_D=-4.0A
1.5
nC
Q_gd
Gate Drain Charge
2.5
nC
t_D(on)
Turn-On DelayTime
6.5
ns
t_r
Turn-On Rise Time
V_GS=-10V, V_DS=-15V, R_L=3.75Ω,
3.5
ns
t_D(off)
Turn-Off DelayTime
R_GEN=3Ω
41
ns
t_f
Turn-Off Fall Time
9
ns
t_rr
Body Diode Reverse Recovery Time ^IF^{=-4.0A, dI/dt=100A/µs}
11
ns
Q_rr
Body Diode Reverse Recovery Charge ^IF^{=-4.0A, dI/dt=100A/µs}
3.5
nC
A. The value of R_θJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with T_A =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation P_D is based on T_J(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature T_J(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialT_J=25°C.
D. The R_θJA is the sum of the thermal impedence from junction to lead R_θJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in² FR-4 board with
2oz. Copper, assuming a maximum junction temperature of T_J(MAX)=150°C. The SOA curve provides a single pulse ratin g.
2014-5-28
2
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