2N6400 Datasheet, PDF (2/6 Pages) New Jersey Semi-Conductor Products, Inc. – SILICON CONTROLLED RECTIFIERS

2N6400 Series
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Thermal Resistance, Junction to Case
R_θJC
1.5
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds
T_L
260
Unit
°C/W
°C
ELECTRICAL CHARACTERISTICS (T_C = 25°C unless otherwise noted.)
Characteristic
Symbol
OFF CHARACTERISTICS
*Peak Repetitive Forward or Reverse Blocking Current
(V_AK = Rated V_DRM or V_RRM, Gate Open)
T_J = 25°C
T_J = 125°C
ON CHARACTERISTICS
I_DRM, I_RRM
*Peak Forward On–State Voltage
V_TM
(I_TM = 32 A Peak, Pulse Width ≤ 1 ms, Duty Cycle ≤ 2%)
*Gate Trigger Current (Continuous dc)
T_C = 25°C
I_GT
(V_D = 12 Vdc, R_L = 100 Ohms)
T_C = –40°C
*Gate Trigger Voltage (Continuous dc)
V_GT
(V_D = 12 Vdc, R_L = 100 Ohms)
T_C = 25°C
T_C = –40°C
Gate Non–Trigger Voltage
(V_D = 12 Vdc, R_L = 100 Ohms)
V_GD
T_C = +125°C
*Holding Current
T_C = 25°C
I_H
(V_D = 12 Vdc, Initiating Current = 200 mA,
Gate Open)
*T_C = –40°C
Turn-On Time
t_gt
(I_TM = 16 A, I_GT = 40 mAdc, V_D = Rated V_DRM)
Turn-Off Time
t_q
(I_TM = 16 A, I_R = 16 A, V_D = Rated V_DRM)
T_C = 25°C
T_J = +125°C
DYNAMIC CHARACTERISTICS
Critical Rate–of–Rise of Off-State Voltage
(V_D = Rated V_DRM, Exponential Waveform)
*Indicates JEDEC Registered Data.
T_J = +125°C
dv/dt
Min
Typ
Max
Unit
–
–
10
µA
–
–
2.0
mA
–
–
1.7
Volts
–
9.0
30
mA
–
–
60
Volts
–
0.7
1.5
–
–
2.5
0.2
–
Volts
–
–
18
40
mA
–
–
60
–
1.0
–
µs
µs
–
15
–
–
35
–
–
50
–
V/µs
www.kersemi.com
2