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2N6344 Datasheet, PDF (2/6 Pages) ON Semiconductor – Silicon Bidirectional Thyristors
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2N6344, 2N6349
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
*Thermal Resistance, Junction to Case
RθJC
2.2
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds
TL
260
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic
Symbol
Min
Typ
OFF CHARACTERISTICS
* Peak Repetitive Blocking Current
(VD = Rated VDRM, VRRM; Gate Open)
ON CHARACTERISTICS
TJ = 25°C
TJ = 100°C
IDRM,
IRRM
—
—
—
—
* Peak On−State Voltage
(ITM = "11 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle p2%)
Gate Trigger Current (Continuous dc)
(VD = 12 Vdc, RL = 100 Ohms)
Quadrant I: MT2(+), G(+)
Both
Quadrant II: MT2(+), G(−)
2N6349 only
Quadrant III: MT2(−), G(−)
Both
Quadrant IV: MT2(−), G(+)
2N6349 only
*MT2(+), G(+); MT2(−), G(−) TC = −40°C
*MT2(+), G(−); MT2(−), G(+) TC = −40°C
Gate Trigger Voltage (Continuous dc)
(VD = 12 Vdc, RL = 100 Ohms)
Quadrant I: MT2(+), G(+)
Both
Quadrant II: MT2(+), G(−)
2N6349 only
Quadrant III: MT2(−), G(−)
Both
Quadrant IV: MT2(−), G(+)
2N6349 only
*MT2(+), G(+); MT2(−), G(−) TC = −40°C
*MT2(+), G(−); MT2(−), G(+) TC = −40°C
Gate Non−Trigger Voltage (Continuous dc)
(VD = Rated VDRM, RL = 10 k Ohms, TJ = 100°C)
*MT2(+), G(+); MT2(−), G(−); MT2(+), G(−); MT2(−), G(−)
VTM
—
1.3
IGT
—
12
—
12
—
20
—
35
—
—
—
—
VGT
—
0.9
—
0.9
—
1.1
—
1.4
—
—
—
—
VGD
0.2
—
* Holding Current
(VD = 12 Vdc, Gate Open)
(Initiating Current = "200 mA)
* Turn-On Time
(VD = Rated VDRM, ITM = 11 A, IGT = 120 mA,
Rise Time = 0.1 µs, Pulse Width = 2 µs)
IH
TC = 25°C
*TC = −40°C
tgt
—
6.0
—
—
—
1.5
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Commutation Voltage
(VD = Rated VDRM, ITM = 11 A, Commutating di/dt = 4.0 A/ms,
Gate Unenergized, TC = 80°C)
*Indicates JEDEC Registered Data.
dv/dt(c)
—
5.0
Unit
°C/W
°C
Max
Unit
10
µA
2.0
mA
1.55
Volts
mA
50
75
50
75
100
125
Volts
2.0
2.5
2.0
2.5
2.5
3.0
Volts
—
mA
40
75
2.0
µs
—
V/µs
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