TYN1225 Datasheet, PDF (1/4 Pages) STMicroelectronics – SCR

TYN1225
KERSMI ELECTRONIC CO.,LTD.
1200V
Description
This MOSFETS use advanced trench technology and design to provide
excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.
Features
BVDSS
ID
12000V
25A
1) Low gate charge.
2) Green device available.
3) Advanced high cell denity trench technology for ultra RDS(ON)
4) Excellent package for good heat dissipation.
TO-220
Absolute Maximum Ratings TC=25℃,unless otherwise noted
Thermal Characteristics
Symbol
RƟJC
RƟJA
Parameter
Thermal Resistance ,Junction to Case1
Thermal Resistance, Junction to Ambient1
Ratings
60
1.3
Units
°C/W
Package Marking and Ordering Information
Part NO.
TYN1225
Marking
TYN1225
www.kersemi.com
Package
TO-220
1