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SF3GZ47 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – TOSHIBA THYRISTOR SILICON DIFFUSED TYPE | |||
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SF3GZ47,SF3JZ47
MEDIUM POWER CONTROL APPLICATIONS
Unit: mm
l Repetitive Peak OffâState Voltage : VDRM = 400, 600V
Repetitive Peak Reverse Voltage : VRRM = 400, 600V
l Average OnâState Current
: IT (AV) = 3A
l Isolation Voltage
: VIsol = 1500V AC
MAXIMUM RATINGS
CHARACTERISTIC
Repetitive Peak
OffâState Voltage and
Repetitive Peak Reverse
Voltage
SF3GZ47
SF3JZ47
NonâRepetitive Peak
Reverse Voltage
(NonâRepetitive < 5ms,
Tj = 0~125°C)
SF3GZ47
SF3JZ47
Average OnâState Current
(Half Sine Waveform Tc = 98°C)
R.M.S OnâState Current
Peak One Cycle Surge OnâState
Current (NonâRepetitive)
I2t Limit Value
Critical Rate of Rise of OnâState
Current
(Note 1)
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Forward Gate Voltage
Peak Reverse Gate Voltage
Peak Forward Gate Current
Junction Temperature
Storage Temperature Range
Isolation Voltage (AC, t = 1min.)
SYMBOL
VDRM
VRRM
VRSM
IT (AV)
IT (RMS)
ITSM
I2t
di / dt
PGM
PG (AV)
VFGM
VRGM
IGM
Tj
Tstg
VIsol
RATING
400
600
500
720
3
4.7
50 (50Hz)
55 (60Hz)
12.5
100
5
0.5
10
â5
2
â40~125
â40~150
1500
UNIT
V
V
A
A
A
A2s
A / µs
W
W
V
V
A
°C
°C
V
JEDEC
JEITA
TOSHIBA
Weight: 1.7g
â
â
13â10H1B
www.kersemi.com
2013-07-10
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