MSS40-800 Datasheet, PDF (1/5 Pages) Kersemi Electronic Co., Ltd. – BACK TO BACK SCR MODULE

MSS40 / 50 Series
BACK TO BACK SCR MODULE
MAIN FEATURES:
Symbol
Value
Unit
I_T(RMS)
V_DRM/V_RRM
I_GT
55 and 70
A
800 and 1200
V
50
mA
A2
G2
G1
DESCRIPTION
Packaged in ISOTOP modules, the MSS40 /
MSS50 Series is based on two back-to-back SCR
configurations, providing high noise immunity.
They are suitable for high power applications such
as solid state relays, heating control systems,
welding equipment, motor control circuits...
The compactness of the ISOTOP package allows
high power density and optimized power bus
connections. Thanks to their internal ceramic pad,
they provide high voltage insulation (2500V RMS),
complying with UL standards (File ref: E81734).
PIN CONNECTIONS
A1
ISOTOP®
G1
1: Thyristor 2 Anode (A2)
2: Thyristor 2 Gate (G2)
3: Thyristor 1 Anode (A1)
4: Thyristor 1 Gate (G1)
43
A1
12
A2
G2
ABSOLUTE RATINGS (limiting values)
Symbol
I_T(RMS)
I_TSM
I^²t
dI/dt
I_GM
P_G(AV)
T_stg
T_j
V_RGM
Parameter
RMS on-state current
Non repetitive surge peak on-state
current
I^²t Value for fusing
Critical rate of rise of on-state current
I_G = 2 x I_GT , tr ≤ 100 ns
Peak gate current
Tc = 80 °C
Tc = 85 °C
tp = 16.7 ms
tp = 20 ms
Tj = 25°C
tp = 10 ms Tj = 25°C
F = 120 Hz Tj = 125°C
tp = 20 µs Tj = 125°C
Average gate power dissipation
Tj = 125°C
Storage junction temperature range
Operating junction temperature range
Maximum peak reverse gate voltage
Value
MSS40
55
420
400
800
MSS50
70
630
600
1800
50
4
1
- 40 to + 150
- 40 to + 125
5
Unit
A
A
A²S
A/µs
A
W
°C
V
1/5
www.kersemi.com