MCR218-2 Datasheet, PDF (1/5 Pages) Kersemi Electronic Co., Ltd. – Silicon Controlled Rectifiers

MCR218-2, MCR218-4,
MCR218-6
Preferred Device
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed primarily for half-wave ac control applications, such as
motor controls, heating controls and power supplies; or wherever
half-wave silicon gate-controlled, solid-state devices are needed.
• Glass-Passivated Junctions
• Blocking Voltage to 400 Volts
• TO-220 Construction — Low Thermal Resistance, High Heat
Dissipation and Durability
• Device Marking: Logo, Device Type, e.g., MCR218–2, Date Code
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
* Peak Repetitive Off–State Voltage(1)
(TJ = 40 to 125°C, Gate Open)
VDRM,
VRRM
MCR218–2
50
MCR218–4
200
MCR218–6
400
Unit
Volts
On-State RMS Current
IT(RMS)
8.0
A
(180° Conduction Angles; TC = 70°C)
Peak Non-repetitive Surge Current
(1/2 Cycle, Sine Wave 60 Hz,
TJ = 125°C)
Circuit Fusing Considerations
(t = 8.3 ms)
ITSM
I2t
100
A
26
A2s
Forward Peak Gate Power
(Pulse Width ≤ 1.0 µs, TC = 70°C)
Forward Average Gate Power
(t = 8.3 ms, TC = 70°C)
Forward Peak Gate Current
(Pulse Width ≤ 1.0 µs, TC = 70°C)
Operating Junction Temperature Range
PGM
PG(AV)
IGM
TJ
5.0
0.5
2.0
– 40 to
+125
Watts
Watts
A
°C
Storage Temperature Range
Tstg
– 40 to
°C
+150
(1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
www.kersemi.com
SCRs
8 AMPERES RMS
50 thru 400 VOLTS
G
A
K
4
1
2
3
TO–220AB
CASE 221A
STYLE 3
PIN ASSIGNMENT
1
Cathode
2
Anode
3
Gate
4
Anode
ORDERING INFORMATION
Device
Package
Shipping
MCR218–2
TO220AB
500/Box
MCR218–4
TO220AB
500/Box
MCR218–6
TO220AB
500/Box
Preferred devices are recommended choices for future use
and best overall value.
1