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MCR16N Datasheet, PDF (1/6 Pages) Digitron Semiconductors – SILICON CONTROLLED RECTIFIERS | |||
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MCR16N
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed primarily for halfâwave ac control applications, such as
motor controls, heating controls, and power supplies; or wherever
halfâwave, silicon gateâcontrolled devices are needed.
⢠Blocking Voltage to 800 Volts
⢠OnâState Current Rating of 16 Amperes RMS
⢠High Surge Current Capability â 160 Amperes
⢠Rugged Economical TOâ220AB Package
⢠Glass Passivated Junctions for Reliability and Uniformity
⢠Minimum and Maximum Values of IGT, VGT, and IH Specified for
Ease of Design
⢠High Immunity to dv/dt â 100 V/µsec Minimum at 125°C
⢠Device Marking: Logo, Device Type, e.g., MCR16N, Date Code
www.kersemi.com
SCRs
16 AMPERES RMS
800 VOLT
G
A
K
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Peak Repetitive OffâState Voltage(1)
VDRM,
(TJ = â40 to 125°C, Sine Wave, 50 to VRRM
60 Hz, Gate Open)
MCR16N
800
Unit
Volts
On-State RMS Current
IT(RMS)
16
A
(180° Conduction Angles; TC = 80°C)
Peak Non-repetitive Surge Current
(1/2 Cycle, Sine Wave 60 Hz,
TJ = 125°C)
Circuit Fusing Consideration
(t = 8.3 ms)
ITSM
I2t
160
A
106
A2sec
Forward Peak Gate Power
(Pulse Width ⤠1.0 µs, TC = 80°C)
PGM
5.0
Watts
Forward Average Gate Power
(t = 8.3 ms, TC = 80°C)
PG(AV)
0.5
Watts
Forward Peak Gate Current
IGM
(Pulse Width ⤠1.0 µs, TC = 80°C)
Operating Junction Temperature Range
TJ
2.0
A
â 40 to
°C
+125
Storage Temperature Range
Tstg
â 40 to
°C
+150
(1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; positive gate voltage shall not be
applied concurrent with negative potential on the anode. Blocking voltages
shall not be tested with a constant current source such that the voltage
ratings of the devices are exceeded.
4
1
2
3
TOâ220AB
CASE 221A
STYLE 3
PIN ASSIGNMENT
1
Cathode
2
Anode
3
Gate
4
Anode
ORDERING INFORMATION
Device
Package
Shipping
MCR16N
TO220AB
50 Units/Rail
Preferred devices are recommended choices for future use
and best overall value.
1
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