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MCR100-003 Datasheet, PDF (1/6 Pages) Kersemi Electronic Co., Ltd. – Silicon Controlled Rectifiers
MCR100 Series
Preferred Device
Sensitive Gate
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
PNPN devices designed for high volume, line-powered consumer
applications such as relay and lamp drivers, small motor controls, gate
drivers for larger thyristors, and sensing and detection circuits.
Supplied in an inexpensive plastic TO-226AA package which is
readily adaptable for use in automatic insertion equipment.
• Sensitive Gate Allows Triggering by Microcontrollers and Other
Logic Circuits
• Blocking Voltage to 600 V
• On−State Current Rating of 0.8 Amperes RMS at 80°C
• High Surge Current Capability — 10 A
• Minimum and Maximum Values of IGT, VGT and IH Specified for
Ease of Design
• Immunity to dV/dt — 20 V/msec Minimum at 110°C
• Glass-Passivated Surface for Reliability and Uniformity
• Device Marking: Device Type, e.g., MCR100−3, Date Code
• Pb−Free Packages are Available*
www.kersemi.com
SCRs
0.8 A RMS
100 thru 600 V
G
A
K
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Peak Repetitive Off−State Voltage(Note 1) VDRM,
V
(TJ = *40 to 110°C, Sine Wave, 50 to VRRM
60 Hz; Gate Open)
MCR100−3
100
MCR100−4
200
MCR100−6
400
MCR100−8
600
On-State RMS Current
IT(RMS)
0.8
A
(TC = 80°C) 180° Conduction Angles
1
23
TO−92 (TO−226)
CASE 029
STYLE 10
Peak Non-Repetitive Surge Current
(1/2 Cycle, Sine Wave, 60 Hz,
TJ = 25°C)
Circuit Fusing Consideration (t = 8.3 ms)
Forward Peak Gate Power
(TA = 25°C, Pulse Width v 1.0 ms)
ITSM
I2t
PGM
10
A
0.415
A2s
0.1
W
PIN ASSIGNMENT
1
Cathode
2
Gate
3
Anode
Forward Average Gate Power
(TA = 25°C, t = 8.3 ms)
Forward Peak Gate Current
(TA = 25°C, Pulse Width v 1.0 ms)
PG(AV)
0.10
W
IGM
1.0
A
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Reverse Peak Gate Voltage
VGRM
5.0
V
(TA = 25°C, Pulse Width v 1.0 ms)
Preferred devices are recommended choices for future use
and best overall value.
Operating Junction Temperature Range
TJ
−40 to
°C
@ Rate VRRM and VDRM
110
Storage Temperature Range
Tstg
−40 to
°C
150
*For additional information on our Pb−Free strategy
and soldering details, please download the
ON Semiconductor Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate
voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current
source such that the voltage ratings of the devices are exceeded.
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