MBR750 Datasheet, PDF (1/2 Pages) Sirectifier Semiconductors – Wide Temperature Range and High Tjm Schottky Barrier Rectifiers

MBR735 THRU MBR760
0.160 (4.06)
0.140 (3.56)
0.415 (10.54) MAX.
0.370 (9.40)
0.360 (9.14)
0.154 (3.91)
0.148 (3.74)DIA.
0.113 (2.87)
0.103 (2.62)
0.145 (3.68)
0.135 (3.43)
0.410 (10.41)
0.390 (9.91)
PIN
1
2
0.635 (16.13)
0.625 (15.87)
0.350 (8.89)
0.330 (8.38)
1.148 (29.16)
1.118 (28.40)
0.560 (14.22)
0.530 (13.46)
0.105 (2.67)
0.095 (2.41)
0.037 (0.94)
0.027 (0.68)
0.205 (5.20)
0.195 (4.95)
0.022 (0.56)
0.014 (0.36)
PIN 1
PIN 2
Dimensions in inches and (millimeters)
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
0.560 (14.22)
0.530 (13.46)
0.110 (2.79)
0.100 (2.54)
CASE
Plastic package has Underwriters Laboratory
Flammability Classifications 94V-0
♦ Metal to silicon rectifier,
majority carrier conduction
♦ Low power loss, high efficiency
♦ High current capability, low forward
voltage drop
♦ High surge capability
♦ For use in low voltage, high frequency inverters, free
wheeling, and polarity protection applications
♦ Guardring for overvoltage protection
♦ High temperature soldering guaranteed:
250°C/10 seconds, 0.25" (6.35mm) from case
MECHANICAL DATA
Case: JEDEC TO-220AC molded plastic body
Terminals: Lead solderable per MIL-STD-750,
Method 2026
Polarity: As marked
Mounting Position: Any
Mounting Torque: 5 in. - lbs. max.
Weight: 0.08 ounces, 2.24 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
SYMBOLS
MBR735
MBR745
MBR750
MBR760
UNITS
Maximum repetitive peak reverse voltage
VRRM
35
Maximum working peak reverse voltage
VRWM
35
Maximum DC blocking voltage
VDC
35
Maximum average forward rectified current (SEE FIG 1)
I(AV)
Peak repetitive forward current (square wave, 20 KHZ)
at TC=105°C
IFRM
Peak forward surge current, 8.3ms single half sine-
wave superimposed on rated load (JEDEC Method)
IFSM
45
50
45
50
45
50
7.5
15.0
150.0
60
Volts
60
Volts
60
Volts
Amps
Amps
Amps
Peak repetitive reverse surge current (NOTE 1)
Maximum instantaneous
forward voltage at
(NOTE 2)
IF=7.5A, TC=25°C
IF=7.5A, TC=125°C
IF=15A, TC=25°C
IF=15A, TC=125°C
Maximum instantaneous reverse current at
rated DC blocking voltage
TC=25°C
(NOTE 1)
TC=125°C
Voltage rate of change (rated VR)
Maximum thermal resistance, (NOTE 3)
Operating junction temperature range
Storage temperature range
IRRM
VF
IR
dv/dt
RΘJC
RΘJA
TJ
TSTG
1.0
0.5
-
0.75
0.57
0.65
0.84
-
0.72
-
0.1
0.5
15.0
50
10,000
3.0
60.0
-65 to +150
-65 to +175
Amps
Volts
mA
V/µs
°C/W
°C
°C
NOTES:
(1) 2.0µs, pulse width, f=1.0 KHZ
(2) Pulse test: 300µs pulse width, 1% duty cycle
(3) Thermal resistance from junction to case and/or thermal resistance from junction to ambient
4/98
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