MBR20T100CT Datasheet, PDF (1/6 Pages) Vishay Siliconix – High Performance Schottky Generation 5.0, 2 x 10 A

MBR20T100CT
Base ₂
common
cathode
TO-220AB
Anode
2
Anode
1 Common 3
cathode
PRODUCT SUMMARY
I_F(AV)
V_R
V_F at 10 A at 125 °C
2 x 10 A
100 V
0.68 V
FEATURES
• 175 °C high performance Schottky diode
• Very low forward voltage drop
• Extremely low reverse leakage
• Optimized V_F vs. I_R trade off for high efficiency
• Increased ruggedness for reverse avalanche capability
• RBSOA available
• Negligible switching losses
• Submicron trench technology
• Full lead (Pb)-free and RoHS compliant devices
• Designed and qualified for industrial level
APPLICATIONS
• High efficiency SMPS
• Automotive
• High frequency switching
• Output rectification
• Reverse battery protection
• Freewheeling
• Dc-to-dc systems
• Increased power density systems
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
V_RRM
V_F
10 Apk, T_J = 125 °C (typical, per leg)
T_J
Range
VALUES
100
0.62
- 55 to 175
UNITS
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
SYMBOL TEST CONDITIONS
V_R
T_J = 25 °C
MBR20T100CT
100
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average
forward current
per leg
per device
I_F(AV)
Maximum peak one cycle
non-repetitive surge current per leg
I_FSM
Non-repetitive avalanche energy per leg E_AS
Repetitive avalanche current per leg
I_AR
TEST CONDITIONS
50 % duty cycle at T_C = 159 °C, rectangular waveform
5 µs sine or 3 µs rect. pulse
10 ms sine or 6 ms rect. pulse
Following any rated load
condition and with rated
V_RRM applied
T_J = 25 °C, I_AS = 3 A, L = 12 mH
Limited by frequency of operation and time pulse duration so
that T_J < T_J max. I_AS at T_J max. as a function of time pulse
See fig. 8
VALUES
10
20
850
200
54
I_AS at
T_J max.
UNITS
A
A
mJ
A
1
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