MBR20H200CT-E3 Datasheet, PDF (1/4 Pages) Kersemi Electronic Co., Ltd. – Guarding for overvoltage protection

MBR20H200CT, MBRF20H200CT & SB20H200CT-1
TO-220AB
ITO-220AB
123
MBR20H200CT
3
12
MBRF20H200CT
TO-262AA
1 ²³
SB20H200CT-1
PIN 1
PIN 2
PIN 3
CASE
PRIMARY CHARACTERISTICS
I_F(AV)
V_RRM
I_FSM
V_F
T_J
2 x 10 A
200 V
290 A
0.75 V
175 °C
FEATURES
• Guarding for overvoltage protection
• Low power loss, high efficiency
• Low forward voltage drop
• High frequency operation
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency inverters, freewheeling and
polarity protection applications.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-262AA
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
Mounting Torque: 10 in-lbs maximum
Polarity: As marked
MAXIMUM RATINGS (T_C = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
V_RRM
Working peak reverse voltage
Maximum DC blocking voltage
V_RWM
V_DC
Maximum average forward rectified current
total device
per diode
I_F(AV)
Peak forward surge current 8.3 ms single half sine-wave superimposed
on rated load per diode
I_FSM
Peak repetitive reverse current per diode at t_p = 2 µs, 1 kHz
Peak non-repetitive reverse surge energy per diode (8/20 µs waveform)
Non-repetitive avalanche energy per diode at 25 °C, I_AS = 2.0 A, L = 10 mH
Electrostatic discharge capacitor voltage
human body model air discharge: C = 100 pF, R 0 1.5 kΩ
I_RRM
E_RSM
E_AS
V_C
Voltage rate of change (rated V_R)
Operating junction and storage temperature range
Isolation voltage (ITO-220AB only) from terminals to heatsink t = 1 minute
dV/dt
T_J, T_STG
V_AC
MBR20H200CT
200
200
200
20
10
290
1.0
20
20
25
10 000
- 65 to + 175
1500
UNIT
V
V
V
A
A
A
mJ
mJ
kV
V/µs
°C
V
www.kersemi.com
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