MBR20H100CTG Datasheet, PDF (1/3 Pages) Kersemi Electronic Co., Ltd. – High Barrier Technology for Improved High Temperature Performance

MBR20H90CTG & MBR20H100CTG
High Barrier Technology for Improved High Temperature Performance
TO-220AB
3
2
1
MBR20H90CTG
MBR20H100CTG
PIN 1
PIN 2
PIN 3
CASE
FEATURES
• Guardring for overvoltage protection
• Lower power losses, high efficiency
• Low forward voltage drop
• Low leakage current
• High forward surge capability
• High frequency operation
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
PRIMARY CHARACTERISTICS
I_F(AV)
V_RRM
I_FSM
V_F
I_R
T_J max.
10 A x 2
90 V, 100 V
150 A
0.70 V
3.5 µA
175 °C
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching
mode power supplies, freewheeling diodes, dc-to-dc
converters or polarity protection application.
MECHANICAL DATA
Case: TO-220AB
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (T_C = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified current at T_C = 155 °C
total device
per diode
V_RRM
V_RWM
V_DC
I_F(AV)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
I_FSM
Peak repetitive reverse current per diode at t_p = 2 µs, 1 kHz
Voltage rate of change (rated V_R)
Operating junction and storage temperature range
I_RRM
dV/dt
T_J, T_STG
MBR20H90CTG MBR20H100CTG
90
100
90
100
90
100
20
10
150
0.5
10 000
- 65 to + 175
UNIT
V
V
V
A
A
A
V/µs
°C
www.kersemi.com
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