MBR2060 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – Schottky Barrier Rectifier

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21201 Itasca Street Chatsworth

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Features
• Metal of siliconrectifier, majonty carrier conducton
• Guard ring for transient protection
• Low power loss high efficiency
• High surge capacity, High current capability
Maximum Ratings
• Operating Temperature: -55°C to +150°C
• Storage Temperature: -55°C to +150°C
Microsemi
Catalog
Number
Device
Marking
MBR2020 MBR2020
MBR2030 MBR2030
MBR2035 MBR2035
MBR2040 MBR2040
MBR2045 MBR2045
MBR2060 MBR2060
MBR2080 MBR2080
MBR20100 MBR20100
Maximum
Recurrent
Peak
Reverse
Voltage
20V
30V
35V
40V
45V
60V
80V
100V
Maximum
RMS
Voltage
Maximum
DC
Blocking
Voltage
14V
21V
24.5V
28V
31.5V
42V
56V
70V
20V
30V
35V
40V
45V
60V
80V
100V
MBR2020
THRU
MBR20100
20 Amp
Schottky Barrier
Rectifier
20 to 100 Volts
TO-220AC
B
F
C
S
Q
T
A
U
H
K
L
Electrical Characteristics @ 25°C Unless Otherwise Specified
Average Forward
Current
I_F(AV)
20A T_C = 135°C
Peak Forward Surge
I_FSM
Current
150A 8.3ms, half sine
Maximum Forward
Voltage Drop Per
V_F
Element MBR2020-2045
MBR2060
MBR2080-20100
Maximum DC
Reverse Current At
IR
Rated DC Blocking
Voltage
.63V
.75V
.84V
I_FM = 20A per
element;
T_A = 25°C*
0.1mA T_J = 25°C
D
G
J
R



INCHES
MM






A
.595
.620
15.11
15.75
B
.380
.405
9.65
10.29
C
.160
.190
4.06
4.82
D
.025
.035
0.64
0.89
F
.142
.147
3.61
3.73
G
.190
.210
4.83
5.33
H
.110
.130
2.79
3.30
J
.018
.025
0.46
0.64
K
.500
.562
12.70
14.27
L
.045
.060
1.14
1.52
Q
.100
.120
2.54
3.04
R
.080
.110
2.04
2.79
S
.045
.055
1.14
1.39
T
.235
.255
5.97
6.48
U
------
.050
-----
1.27
 
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